CY62167ELL-45ZXI Cypress Semiconductor Corp, CY62167ELL-45ZXI Datasheet - Page 5

• Manufacturer Part Number: CY62167ELL-45ZXI
• Description: CY62167ELL-45ZXI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62167ELL-45ZXI

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP I
• Density: 16Mb
• Access Time (max): 45ns
• Sync/async: Asynchronous
• Architecture: SDR
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 21/20Bit
• Package Type: TSOP-I
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 30mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 48
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AC Test Loads and Waveforms
Data Retention Characteristics
Over the operating range
Data Retention Waveform
Notes
Document Number: 001-15607 Rev. *B
V
I
t
t
12. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
13. Chip enables (CE
14. Tested initially and after any design or process changes that may affect these parameters.
15. Full device operation requires linear V
16. BHE. BLE is the AND of BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling BHE and BLE.
CCDR
CDR
R
DR
CE
BHE. BLE
[15]
Parameter
[14]
1
[13]
or
CE
or
V
CC
2
OUTPUT
Parameters
1
INCLUDING
V
and CE
V
Data retention current
Chip deselect to data
retention time
Operation recovery time –
CC
R
V
CC
R1
R2
JIG AND
TH
TH
SCOPE
for data retention
30 pF
2
), byte enables (BHE and BLE) and BYTE need to be tied to CMOS levels to meet the I
Description
R1
CC
ramp from V
[16]
R2
V
t
CC
CDR
(min)
–
V
0.2 V, or BHE and BLE > V
V
–
DR
CC
IN
RISE TIME= 1 V/ns
to V
> V
= V
CC
V
CC
(min) > 100 µs or stable at V
DR
CC
GND
– 0.2 V or V
, CE
EQUIVALENT TO: THÉVENIN EQUIVALENT
Conditions
DATA RETENTION MODE
1
Values
> V
1800
10%
1.77
990
639
CC
OUTPUT
V
IN
DR
– 0.2 V or CE
< 0.2 V
> 2.0 V
ALL INPUT PULSES
CC
90%
CC
– 0.2 V,
(min) > 100 µs.
2
<
R
TH
Min
SB2
2.0
90%
45
–
0
CC
10%
/ I
CCDR
= V
FALL TIME= 1 V/ns
V
V
CC
CC
t
R
spec. Other inputs can be left floating.
Typ
(typ), T
(min)
CY62167E MoBL
–
–
–
–
[12]
Unit
A
Ω
Ω
Ω
V
= 25 °C.
Max
12
–
–
–
Page 5 of 15
Unit
µA
ns
ns
V
®
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