CY14B101LA-ZS45XIT Cypress Semiconductor Corp, CY14B101LA-ZS45XIT Datasheet - Page 5

• Manufacturer Part Number: CY14B101LA-ZS45XIT
• Description: CY14B101LA-ZS45XIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14B101LA-ZS45XIT

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 1M (128K x 8)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Device Operation
The CY14B101LA/CY14B101NA nvSRAM is made up of two
functional components paired in the same physical cell. They are
an SRAM memory cell and a nonvolatile QuantumTrap cell. The
SRAM memory cell operates as a standard fast static RAM. Data
in the SRAM is transferred to the nonvolatile cell (the STORE
operation), or from the nonvolatile cell to the SRAM (the RECALL
operation). Using this unique architecture, all cells are stored and
recalled in parallel. During the STORE and RECALL operations,
SRAM
CY14B101LA/CY14B101NA supports infinite reads and writes
similar to a typical SRAM. In addition, it provides infinite RECALL
operations from the nonvolatile cells and up to 1 million STORE
operations. Refer to the
page 17
SRAM Read
The CY14B101LA/CY14B101NA performs a read cycle when
CE and OE are LOW and WE and HSB are HIGH. The address
specified on pins A
data bytes or 65,536 words of 16 bits each are accessed. Byte
enables (BHE, BLE) determine which bytes are enabled to the
output, in the case of 16-bit words. When the read is initiated by
an address transition, the outputs are valid after a delay of t
(read cycle 1). If the read is initiated by CE or OE, the outputs
are valid at t
data output repeatedly responds to address changes within the
t
input pins. This remains valid until another address change or
until CE or OE is brought HIGH, or WE or HSB is brought LOW.
SRAM Write
A write cycle is performed when CE and WE are LOW and HSB
is HIGH. The address inputs must be stable before entering the
write cycle and must remain stable until CE or WE goes HIGH at
the end of the cycle. The data on the common I/O pins DQ
are written into the memory if the data is valid t
of a WE-controlled write or before the end of a CE-controlled
write. The Byte Enable inputs (BHE, BLE) determine which bytes
are written, in the case of 16-bit words. Keep OE HIGH during
the entire write cycle to avoid data bus contention on common
I/O lines. If OE is left LOW, internal circuitry turns off the output
buffers t
AutoStore Operation
The CY14B101LA/CY14B101NA stores data to the nvSRAM
using one of the following three storage operations: Hardware
STORE activated by HSB; Software STORE activated by an
address sequence; AutoStore on device power-down. The
AutoStore operation is a unique feature of QuantumTrap
technology
CY14B101LA/CY14B101NA.
During a normal operation, the device draws current from V
charge a capacitor connected to the V
charge is used by the chip to perform a single STORE operation.
If the voltage on the V
automatically disconnects the V
operation is initiated with power provided by the V
Note
Document #: 001-42879 Rev. *K
AA
9. HSB pin is not available in 44-TSOP II (x16) package.
access time without the need for transitions on any control
HZWE
for a complete description of read and write modes.
read
ACE
after WE goes LOW.
and
and
or at t
0-16
is
DOE
write
or A
CC
Truth Table For SRAM Operations on
, whichever is later (read cycle 2). The
enabled
0-15
pin drops below V
operations
determines which of the 131,072
CAP
pin from V
by
CAP
are
default
SD
SWITCH
pin. This stored
inhibited.
CC
before the end
CAP
. A STORE
, the part
capacitor.
on
CC
0–15
The
the
AA
to
Note If the capacitor is not connected to V
must be disabled using the soft sequence specified in
AutoStore on page
capacitor on V
operation without sufficient charge to complete the store. This
corrupts the data stored in nvSRAM.
Figure 4
(V
Characteristics on page 9
the V
should be placed on WE to hold it inactive during power-up. This
pull-up is effective only if the WE signal is tristate during
power-up. Many MPUs tristate their controls on power-up. This
should be verified when using the pull-up. When the nvSRAM
comes out of power-on-RECALL, the MPU must be active or the
WE held inactive until the MPU comes out of reset.
To reduce unnecessary nonvolatile stores, AutoStore and
Hardware STORE operations are ignored unless at least one
write operation has taken place since the most recent STORE or
RECALL cycle. Software initiated STORE cycles are performed
regardless of whether a write operation has taken place. The
HSB signal is monitored by the system to detect if an AutoStore
cycle is in progress.
Figure 4. AutoStore Mode
Hardware STORE Operation
The CY14B101LA/CY14B101NA provides the HSB
control and acknowledge the STORE operations. Use the HSB
pin to request a Hardware STORE cycle. When the HSB pin is
driven LOW, the CY14B101LA/CY14B101NA conditionally
initiates a STORE operation after t
only begins if a write to the SRAM has taken place since the last
STORE or RECALL cycle. The HSB pin also acts as an open
drain driver (internal 100 K
nally driven LOW to indicate a busy condition when the STORE
(initiated by any means) is in progress.
Note After each Hardware and Software STORE operation HSB
is driven HIGH for a short time (t
current and then remains HIGH by internal 100 k
resistor.
CAP
CAP
) for automatic STORE operation. Refer to
WE
shows the proper connection of the storage capacitor
pin is driven to V
CAP
V
V
V
CC
CC
SS
7. In case AutoStore is enabled without a
pin, the device attempts an AutoStore
CC
V
Ω
for the size of V
CAP
by a regulator on the chip. A pull-up
weak pull-up resistor) that is inter-
HHHD
DELAY
0.1 uF
) with standard output high
. An actual STORE cycle
CY14B101NA
CY14B101LA
CAP
CAP
. The voltage on
V
CAP
pin, AutoStore
DC Electrical
Page 5 of 26
Preventing
Ω
[9]
pull-up
pin to
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