CY14B101LA-SP25XI Cypress Semiconductor Corp, CY14B101LA-SP25XI Datasheet

IC NVSRAM 1MBIT 25NS 48SSOP

CY14B101LA-SP25XI

Manufacturer Part Number
CY14B101LA-SP25XI
Description
IC NVSRAM 1MBIT 25NS 48SSOP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY14B101LA-SP25XI

Memory Size
1M (128K x 8)
Package / Case
*
Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Speed
25ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Data Bus Width
16 bit
Organization
128 K x 8
Access Time
25 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Operating Current
70 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY14B101LA-SP25XI
Manufacturer:
ALTERA
0
Part Number:
CY14B101LA-SP25XI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY14B101LA-SP25XIT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
1-Mbit (128 K x 8/64 K x 16) nvSRAM
Features
Notes
Cypress Semiconductor Corporation
Document #: 001-42879 Rev. *K
1. Address A
2. Data DQ
3. BHE and BLE are applicable for ×16 configuration only.
Logic Block Diagram
20 ns, 25 ns, and 45 ns access times
Internally organized as 128 K × 8 (CY14B101LA) or 64 K ×
16 (CY14B101NA)
Hands off automatic STORE on power-down with only a small
capacitor
STORE to QuantumTrap nonvolatile elements initiated by
software, device pin, or AutoStore on power-down
RECALL to SRAM initiated by software or power-up
Infinite read, write, and RECALL cycles
1 million STORE cycles to QuantumTrap
20 year data retention
Single 3 V +20% to -10% operation
Industrial temperature
0
- DQ
0
- A
16
7
for ×8 configuration and Data DQ
for ×8 configuration and Address A
[1, 2, 3]
0
- DQ
0
- A
15
15
198 Champion Court
for ×16 configuration.
for ×16 configuration.
1-Mbit (128 K × 8/64 K × 16) nvSRAM
Functional Description
The Cypress CY14B101LA/CY14B101NA is a fast static RAM
(SRAM), with a nonvolatile element in each memory cell. The
memory is organized as 128 K bytes of 8 bits each or 64 K words
of 16 bits each. The embedded nonvolatile elements incorporate
QuantumTrap technology, producing the world’s most reliable
nonvolatile memory. The SRAM provides infinite read and write
cycles, while independent nonvolatile data resides in the highly
reliable QuantumTrap cell. Data transfers from the SRAM to the
nonvolatile elements (the STORE operation) takes place
automatically at power-down. On power-up, data is restored to
the SRAM (the RECALL operation) from the nonvolatile memory.
Both the STORE and RECALL operations are also available
under software control.
Packages
Pb-free and restriction of hazardous substances (RoHS)
compliant
32-Pin small-outline integrated circuit (SOIC)
44-/54-Pin thin small outline package (TSOP II)
48-Pin shrink small-outline package (SSOP)
48-Ball fine-pitch ball grid array (FBGA)
San Jose
,
CA 95134-1709
Revised January 18, 2011
CY14B101NA
CY14B101LA
408-943-2600
[+] Feedback

Related parts for CY14B101LA-SP25XI

CY14B101LA-SP25XI Summary of contents

Page 1

... 16) nvSRAM Features 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 128 K × 8 (CY14B101LA × ■ 16 (CY14B101NA) Hands off automatic STORE on power-down with only a small ■ capacitor STORE to QuantumTrap nonvolatile elements initiated by ■ software, device pin, or AutoStore on power-down RECALL to SRAM initiated by software or power-up ■ ...

Page 2

... Software Controlled STORE/RECALL Cycle ................ 15 Hardware STORE Cycle ................................................. 16 Truth Table For SRAM Operations ................................ 17 Ordering Information ...................................................... 18 Part Numbering Nomenclature ...................................... 19 Package Diagrams .......................................................... 20 Acronyms ........................................................................ 23 Document Conventions ............................................. 23 Units of Measure ....................................................... 23 Document History Page ................................................ 24 Sales, Solutions, and Legal Information ...................... 26 Worldwide Sales and Design Support ....................... 26 Products .................................................................... 26 PSoC Solutions ......................................................... 26 CY14B101LA CY14B101NA Page [+] Feedback ...

Page 3

... HSB pin is not available in 44-TSOP II (×16) package. Document #: 001-42879 Rev. *K Figure 1. Pin Diagram - 44-Pin TSOP II A HSB [ [ [ CAP HSB DQ6 DQ7 28 DQ5 27 DQ4 26 DQ3 CY14B101LA CY14B101NA [ [ BHE BLE TSOP [ (×16 Top View (not to scale CAP 32-SOIC (×8) (x8) Top View (not to scale) Page [+] Feedback ...

Page 4

... AutoStore capacitor. Supplies power to the nvSRAM during power loss to store data from SRAM to nonvol- CAP supply atile elements connect No connect. This pin is not connected to the die. Document #: 001-42879 Rev. *K Figure 3. 48-Ball FBGA and 54-Pin TSOP [ Description - CY14B101LA CY14B101NA 54 HSB 1 [ BHE BLE TSOP (x16 ...

Page 5

... Device Operation The CY14B101LA/CY14B101NA nvSRAM is made up of two functional components paired in the same physical cell. They are an SRAM memory cell and a nonvolatile QuantumTrap cell. The SRAM memory cell operates as a standard fast static RAM. Data in the SRAM is transferred to the nonvolatile cell (the STORE operation), or from the nonvolatile cell to the SRAM (the RECALL operation) ...

Page 6

... Notes 10. BHE and BLE are applicable for x16 configuration only. 11. While there are 17 address lines on the CY14B101LA (16 address lines on the CY14B101NA), only the 13 address lines (A Rest of the address lines are do not care. 12. The six consecutive address locations must be in the order listed. WE must be HIGH during all six cycles to enable a nonvolatile cycle. ...

Page 7

... STORE and write operations. The low voltage condition is detected when V CC CY14B101LA/CY14B101NA write mode (both CE and WE are LOW) at power-up, after a RECALL or STORE, the write is inhibited until the SRAM is enabled after t active). This protects against inadvertent writes during power-up or brown out conditions. ...

Page 8

... V value to make sure there is extra CAP store charge and store time should discuss their V selection with Cypress to understand any impact on the V voltage level at the end period. RECALL CY14B101LA CY14B101NA value because CAP charge and CAP value. Customers CAP ...

Page 9

... V < Max, V < V < Max, V < V < > OUT < – pin and rated CAP SS CY14B101LA CY14B101NA = 25 °C) .................................................. 1.0 W Ambient Temperature V CC –40 °C to +85 °C 2 3.6 V [13] Min Typ Max 2.7 3.0 3.6 – – – – 10 – 35 – – – ...

Page 10

... Document #: 001-42879 Rev. *K Description Test Conditions = 25 ° MHz (Typ Test Conditions 54-TSOP II 48-SSOP 48-FBGA 44-TSOP II 32-SOIC Unit 36.4 37.47 10.13 24.71 Figure 5. AC Test Loads 3.0 V OUTPUT 789 Ω CY14B101LA CY14B101NA Min Unit 20 Years 1,000 K Max Unit °C/W 38.58 41.74 41.55 ° ...

Page 11

... RC Address Valid OHA CY14B101LA CY14B101NA Unit Min Max Min Max – 25 – – – 25 – – 12 – – 3 – – 3 – ns – 10 – 15 ...

Page 12

... Document #: 001-42879 Rev. *K Address Valid ACE LZCE t DOE t LZOE t DBE t LZBE Output Data Valid t PU Active [22, 24, 25, 26 Address Valid t t SCE PWE Input Data Valid t t LZWE HZWE High Impedance CY14B101LA CY14B101NA [22, 23, 24] t HZCE t HZOE t HZBE t PD Page [+] Feedback ...

Page 13

... HSB must remain HIGH during Read and Write cycles. 30 must be > V during address transitions.. IH Document #: 001-42879 Rev. *K [27, 28, 29, 30 Address Valid SCE PWE Input Data Valid High Impedance t WC Address Valid t SCE PWE Input Data Valid High Impedance CY14B101LA CY14B101NA [27, 28, 29, 30] Page [+] Feedback ...

Page 14

... Figure 11. AutoStore or Power-Up RECALL 32 Note t STORE t HHHD t LZHSB t DELAY t HRECALL Read & Write BROWN POWER-UP OUT RECALL AutoStore SWITCH. is lower than V CC SWITCH. CY14B101LA CY14B101NA Min Max Min Max – 20 – 20 – 8 – 8 – 25 – 25 – 2.65 – 2.65 150 – ...

Page 15

... Address # HZCE t DELAY Note Figure 13. AutoStore Enable/Disable Cycle HZCE Table 2 on page 6. WE must be HIGH during all six consecutive cycles. time. DELAY CY14B101LA CY14B101NA Min Max Min Max 25 – 45 – 0 – 0 – 20 – 30 – 0 – 0 – – 200 – 200 [38 HHHD ...

Page 16

... HSB driver is disabled SRAM is disabled as long as HSB (IN) is driven low DHSB DHSB [40, 41] Figure 15. Soft Sequence Processing t Soft Sequence SS Command Address #6 Address # power must remain HIGH to effectively register command. CC CY14B101LA CY14B101NA Unit Min Max Min Max – 25 – – 15 – ns μ ...

Page 17

... Data In (DQ –DQ ) Write Data In (DQ –DQ ); Write –DQ in High Data In (DQ –DQ ); Write –DQ in High for x16 configuration CY14B101LA CY14B101NA Mode Power Standby Active Active Active Mode Power Standby Active Active Active Active Active Active Active Active Active Active Page [+] Feedback ...

Page 18

... Ordering Information Speed Ordering Code (ns) 20 CY14B101LA-ZS20XIT CY14B101LA-ZS20XI 25 CY14B101LA-SZ25XIT CY14B101LA-SZ25XI CY14B101LA-ZS25XIT CY14B101LA-ZS25XI CY14B101LA-SP25XIT CY14B101LA-SP25XI CY14B101NA-ZS25XIT CY14B101NA-ZS25XI 45 CY14B101LA-SZ45XIT CY14B101LA-SZ45XI CY14B101LA-ZS45XIT CY14B101LA-ZS45XI CY14B101LA-SP45XIT CY14B101LA-SP45XI CY14B101LA-BA45XIT CY14B101LA-BA45XI CY14B101NA-ZS45XIT CY14B101NA-ZS45XI All the above parts are Pb-free. Document #: 001-42879 Rev. *K Package Package Type Diagram 51-85087 44-pin TSOP II ...

Page 19

... Blank - No Rev A - First Rev 14 - nvSRAM Cypress Document #: 001-42879 Rev. *K Option Tape and Reel Temperature: Blank - Std Industrial (- °C) Package: SZP - 32 SOIC ZSP - 44 TSOP II SPP - 48 SSOP BAP - 48 FBGA ZSP - 54 TSOP II Voltage 3.0 V CY14B101LA CY14B101NA Speed Data Bus x16 Density: 101 - 1 Mb Page [+] Feedback ...

Page 20

... Package Diagrams Document #: 001-42879 Rev. *K Figure 16. 32-Pin SOIC (51-85127) Figure 17. 44-Pin TSOP II (51-85087) CY14B101LA CY14B101NA 51-85127 *B 51-85087 *C Page [+] Feedback ...

Page 21

... Package Diagrams (continued) Document #: 001-42879 Rev. *K Figure 18. 48-Pin SSOP (51-85061) CY14B101LA CY14B101NA 51-85061 *D Page [+] Feedback ...

Page 22

... Package Diagrams (continued) Figure 19. 48-Ball FBGA - 1.2 mm (51-85128) Document #: 001-42879 Rev. *K CY14B101LA CY14B101NA 51-85128 *E Page [+] Feedback ...

Page 23

... Figure 20. 54-Pin TSOP II (51-85160) Document Conventions Units of Measure Symbol °C Hz kbit kHz KΩ μA mA μF MHz μ Ω W CY14B101LA CY14B101NA 51-85160 *A Unit of Measure degrees celsius hertz 1024 bits kilohertz kilo ohms microamperes milliampere microfarads megahertz microseconds millisecond nanoseconds picofarads volts ohms watts ...

Page 24

... Document History Page Document Title: CY14B101LA, CY14B101NA 1-Mbit (128 K × 8/64 K × 16) nvSRAM Document Number: 001-42879 Orig. of Submission Rev. ECN No. Change ** 2050747 UNC/PYRS 01/31/08 *A 2607447 GVCH/AESA 11/14/08 *B 2654484 GVCH/PYRS 02/05/09 Document #: 001-42879 Rev. *K Description of Change Date New Datasheet Removed 15 ns access speed Updated “ ...

Page 25

... Document Title: CY14B101LA, CY14B101NA 1-Mbit (128 K × 8/64 K × 16) nvSRAM Document Number: 001-42879 Orig. of Submission Rev. ECN No. Change *C 2733909 GVCH/AESA 07/09/09 *D 2757348 GVCH 08/28/09 *E 2793420 GVCH 10/27/09 *F 2839453 GVCH/PYRS 01/06/10 *G 2894534 GVCH 03/17/10 *H 2922854 GVCH 04/26/10 *I 2958648 GVCH 06/22/10 *J 3074645 GVCH ...

Page 26

... Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document #: 001-42879 Rev. *K All products and company names mentioned in this document may be the trademarks of their respective holders. cypress.com/go/plc Revised January 18, 2011 CY14B101LA CY14B101NA PSoC Solutions psoc.cypress.com/solutions PSoC 1 | ...

Related keywords