CY14B101LA-ZS45XIT Cypress Semiconductor Corp, CY14B101LA-ZS45XIT Datasheet - Page 16

• Manufacturer Part Number: CY14B101LA-ZS45XIT
• Description: CY14B101LA-ZS45XIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14B101LA-ZS45XIT

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 1M (128K x 8)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Hardware STORE Cycle
Switching Waveforms
Document #: 001-42879 Rev. *K
Notes
t
t
t
Parameter
DHSB
PHSB
SS
40. This is the amount of time it takes to take action on a soft sequence command. V
41. Commands such as STORE and RECALL lock out I/O until operation is complete which further increases this time. See the specific command.
42. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware STORE takes place.
[40, 41]
DQ (Data Out)
HSB (OUT)
HSB (OUT)
Address
Write latch not set
Write latch set
HSB (IN)
HSB (IN)
HSB to output active time when write latch not set
Hardware STORE pulse width
Soft sequence processing time
V
CE
CC
RWI
RWI
Address #1
t
SA
t
DELAY
Description
Soft Sequence
t
t
PHSB
DELAY
t
PHSB
Command
Figure 15. Soft Sequence Processing
Figure 14. Hardware STORE Cycle
Address #6
t
DHSB
t
CW
t
SS
t
STORE
t
DHSB
CC
Address #1
Min
power must remain HIGH to effectively register command.
15
–
–
20 ns
Soft Sequence
100 kOhm resistor,
SRAM is disabled as long as HSB (IN) is driven low.
HSB pin is driven high to
HSB driver is disabled
Command
Max
100
20
–
[42]
[40, 41]
Address #6
Min
15
–
–
25 ns
t
CW
t
LZHSB
t
Max
100
HHHD
25
V
–
CC
t
SS
only by Internal
Min
CY14B101NA
CY14B101LA
15
–
–
45 ns
Page 16 of 26
Max
100
25
–
Unit
ns
ns
μs
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