SKB06N60 Infineon Technologies, SKB06N60 Datasheet - Page 7

• Manufacturer Part Number: SKB06N60
• Description: IGBT Transistors FAST IGBT NPT TECH 600V 6A
• Manufacturer: Infineon Technologies

Specifications of SKB06N60

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 12 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 12.0 A
• Ic(max) @ 100°: 6.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB06N60XT

0.4mJ
0.3mJ
0.2mJ
0.1mJ
0.0mJ
0.8mJ
0.6mJ
0.4mJ
0.2mJ
0.0mJ
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
C
GE
= 6A, R
0A
= 0/+15V, R
0°C
*) E
due to diode recovery.
*) E
due to diode recovery.
T
G
j
I
,
on
on
C
= 50 ,
3A
JUNCTION TEMPERATURE
,
and E
and E
COLLECTOR CURRENT
50°C
G
j
CE
ts
ts
= 50 ,
= 150 C, V
include losses
include losses
6A
= 400V, V
100°C
9A
CE
GE
= 400V,
= 0/+15V,
12A
150°C
E
E
E
E
E
E
ts
on
off
on
ts
*
off
*
*
*
15A
7
0.6mJ
0.4mJ
0.2mJ
0.0mJ
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
GE
0
= 0/+15V, I
*) E
due to diode recovery.
on
and E
R
50
C
G
,
= 6A,
j
GATE RESISTOR
ts
= 150 C, V
include losses
SKB06N60
100
CE
Rev. 2.2
= 400V,
150
E
E
off
E
on
Oct. 07
ts
*
*