SKB06N60 Infineon Technologies, SKB06N60 Datasheet - Page 10

• Manufacturer Part Number: SKB06N60
• Description: IGBT Transistors FAST IGBT NPT TECH 600V 6A
• Manufacturer: Infineon Technologies

Specifications of SKB06N60

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 12 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 12.0 A
• Ic(max) @ 100°: 6.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB06N60XT

Figure 24. Typical diode forward current as
a function of forward voltage
Figure 26. Diode transient thermal
impedance as a function of pulse width
(D = t
12A
10A
10
10
0.0V
10
8A
6A
4A
2A
0A
-1
-2
0
K/W
K/W
K/W
p
1µs
/ T)
0.2
0.1
0.05
0.02
D=0.5
single pulse
0.5V
V
0.01
10µs
F
-55°C
,
t
FORWARD VOLTAGE
p
,
25°C
PULSE WIDTH
100°C
100µs
150°C
1.0V
R
0.523
0.550
0.835
1.592
R , ( K / W )
1
1ms
C
1
=
1
/ R
10ms 100ms
1.5V
1
C
7.25*10
6.44*10
7.13*10
7.16*10
2
=
, ( s )
2
/R
R
2
-2
-3
-4
-5
2.0V
2
1s
10
(D = t
Figure 27. IGBT transient thermal
impedance as a function of pulse width
10
10
10
Figure 25. Typical diode forward voltage as
a function of junction temperature
10
2.0V
1.5V
1.0V
-1
-2
-3
0
K/W
K/W
K/W
K/W
p
1µs
/ T)
-40°C
0.01
0.02
0.05
0.1
D=0.5
0.2
single pulse
T
j
,
10µs 100µs
JUNCTION TEMPERATURE
t
0°C
p
,
PULSE WIDTH
40°C
SKB06N60
R
1m s
0.705
0.561
0.583
R , ( K / W )
1
C
1
=
80°C 120°C
1
10m s 100m s
Rev. 2.2
/ R
I
I
1
F
F
C
= 12A
= 6A
0.0341
3.74E-3
3.25E-4
2
=
, ( s )
2
/R
R
Oct. 07
2
2
1s