SKB06N60 Infineon Technologies, SKB06N60 Datasheet - Page 5

• Manufacturer Part Number: SKB06N60
• Description: IGBT Transistors FAST IGBT NPT TECH 600V 6A
• Manufacturer: Infineon Technologies

Specifications of SKB06N60

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 12 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 12.0 A
• Ic(max) @ 100°: 6.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB06N60XT

20A
15A
10A
20A
18A
16A
14A
12A
10A
Figure 7. Typical transfer characteristics
(V
5A
0A
8A
6A
4A
2A
0A
Figure 5. Typical output characteristics
(T
0V
CE
0V
j
= 25 C)
= 10V)
V
CE
V
GE
V
,
2V
GE
=20V
COLLECTOR
1V
15V
13V
11V
9V
7V
5V
,
GATE
4V
-
2V
EMITTER VOLTAGE
-
EMITTER VOLTAGE
6V
3V
T
j
+150°C
=+25°C
-55°C
8V
4V
10V
5V
5
20A
15A
10A
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
4.0V
3.5V
3.0V
2.5V
2.0V
1.5V
1.0V
5A
0A
Figure 6. Typical output characteristics
(T
GE
0V
j
= 150 C)
= 15V)
V
CE
-50°C
V
,
T
GE
COLLECTOR
1V
j
,
=20V
JUNCTION TEMPERATURE
15V
13V
11V
9V
7V
5V
0°C
2V
-
EMITTER VOLTAGE
50°C
SKB06N60
3V
Rev. 2.2
100°C
I
I
C
C
= 12A
= 6A
4V
150°C
Oct. 07
5V