FF401R17KF6C_B2 Infineon Technologies, FF401R17KF6C_B2 Datasheet - Page 8

• Manufacturer Part Number: FF401R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 650A
• Manufacturer: Infineon Technologies

Specifications of FF401R17KF6C_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 650 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 3.1 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 401.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHV 73 mm

2,8x0,5
IGBT-Module
IGBT-Modules
Äußere Abmessungen / external dimensions
Technische Information / Technical Information
screwing depth
max. 16
5,5
26,4
7
C1
E1/C2
27,15
E2
C1
73
G2 E2
FF 401 R 17 KF6C B2
9,75
57
C2/E1 G1
27,15
5
for M5
8(8)
4 deep
C2/E1
C1
G1
FD...
C1
E2 (A2)
vorläufige Daten
preliminary data
E1/C2
(K2)
DD...
C1 (K1)
E2 (A2)
C2/E1
E1/C2
(A1/K2)
C1
G1
G2
E2
FF...
FF401R17KF6CB2_V.xls
C1
E2
E1/C2