FF401R17KF6C_B2 Infineon Technologies, FF401R17KF6C_B2 Datasheet - Page 5

• Manufacturer Part Number: FF401R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 650A
• Manufacturer: Infineon Technologies

Specifications of FF401R17KF6C_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 650 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 3.1 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 401.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHV 73 mm

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
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0
0
0,0
5
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
6
0,5
7
Tj = 25°C
Tj = 125°C
FF 401 R 17 KF6C B2
Tvj = 25°C
Tvj = 125°C
1,0
8
5(8)
V
V
GE
F
1,5
9
[V]
[V]
10
I
C
2,0
V
CE
= f (V
= 20V
11
GE
)
2,5
vorläufige Daten
preliminary data
I
F
12
= f (V
F
)
3,0
13
FF401R17KF6CB2_V.xls