FF401R17KF6C_B2 Infineon Technologies, FF401R17KF6C_B2 Datasheet - Page 6

• Manufacturer Part Number: FF401R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 650A
• Manufacturer: Infineon Technologies

Specifications of FF401R17KF6C_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 650 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 3.1 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 401.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHV 73 mm

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
Schaltverluste (typisch)
Switching losses (typical)
600
500
400
300
200
100
900
800
700
600
500
400
300
200
100
0
0
Schaltverluste (typisch)
Switching losses (typical)
0
0
100
4
200
Eoff
Eon
Erec
Eoff
Eon
Erec
FF 401 R 17 KF6C B2
300
8
E
on
R
gon
E
= f (I
400
on
6(8)
= 1,89 9 9 9 , R
I
C
R
I
= 400A , V
C
= f (R
G
C
[A]
[9 9 9 9 ]
) , E
12
goff
500
G
off
) , E
CE
=3,6 9 9 9 9 , V
= 900V , T
= f (I
off
600
= f (R
C
CE
) , E
= 900V, T
j
= 125°C, V
16
rec
G
) , E
= f (I
700
j
= 125°C, V
GE
rec
= ± 15V
C
vorläufige Daten
preliminary data
= f (R
)
GE
800
= ± 15V
20
G
)
900
FF401R17KF6CB2_V.xls