FZ1200R17KF6C_B2 Infineon Technologies, FZ1200R17KF6C_B2 Datasheet - Page 6

• Manufacturer Part Number: FZ1200R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 1.95KA
• Manufacturer: Infineon Technologies

Specifications of FZ1200R17KF6C_B2

• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 1950 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 9.6 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm
• Lead Free Status / Rohs Status: Not Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
1400
1200
1000
1200
1000
800
600
400
200
800
600
400
200
0
0
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
0
0
400
2
FZ 1200 R 17 KF6C B2
800
Eon
Eoff
Erec
4
E
on
R
gon
= f (I
6(8)
= R
R
I
E
C
goff
G
1200
C
on
[A]
I
Eoff
Eon
Erec
[9 9 9 9 ]
) , E
C
=1,2 9 9 9 9 , V
= 1200A , V
= f (R
6
off
= f (I
CE
G
) , E
= 900V, T
CE
1600
= 900V , T
C
off
) , E
= f (R
j
= 125°C, V
rec
8
j
= 125°C, V
= f (I
G
) , E
GE
2000
C
vorläufige Daten
preliminary data
= ± 15V
)
GE
rec
= ± 15V
= f (R
10
G
2400
)
FZ1200R17KF6CB2_V.xls