FZ1200R17KF6C_B2 Infineon Technologies, FZ1200R17KF6C_B2 Datasheet - Page 7

• Manufacturer Part Number: FZ1200R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 1.95KA
• Manufacturer: Infineon Technologies

Specifications of FZ1200R17KF6C_B2

• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 1950 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 9.6 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm
• Lead Free Status / Rohs Status: Not Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
0,001
3000
2500
2000
1500
1000
500
Transienter Wärmewiderstand
Transient thermal impedance
0
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
r
r
0
i
i
J
J
[K/kW]
[K/kW]
i
i
[sec]
[sec]
i
200
: IGBT
: IGBT
: Diode
: Diode
0,01
IC,Modul
IC,Chip
FZ 1200 R 17 KF6C B2
400
600
0,003
0,003
0,1
1,25
2,46
1
7(8)
800
V
1000
0,045
CE
6,15
0,05
13,4
2
t [sec]
Z
[V]
1
thJC
= f (t)
1200
R
g
4,57
0,45
= 1,2 Ohm, T
2,6
0,1
Zth:Diode
Zth:IGBT
3
1400
10
vorläufige Daten
preliminary data
vj
= 125°C
1600
0,95
4,57
0,75
4
3
1800
FZ1200R17KF6CB2_V.xls
100