ATA6603-EK Atmel, ATA6603-EK Datasheet - Page 315

• Manufacturer Part Number: ATA6603-EK
• Description: MCU, MPU & DSP Development Tools Demoboard LIN-MCM
• Manufacturer: Atmel

Specifications of ATA6603-EK

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4.24.8.2
4.24.8.3
4921E–AUTO–09/09
Data Polling Flash
Data Polling EEPROM
When a page is being programmed into the Flash, reading an address location within the page
being programmed will give the value 0xFF. At the time the device is ready for a new page, the
programmed value will read correctly. This is used to determine when the next page can be writ-
ten. Note that the entire page is written simultaneously and any address within the page can be
used for polling. Data polling of the Flash will not work for the value 0xFF, so when programming
this value, the user will have to wait for at least t
a chip-erased device contains 0xFF in all locations, programming of addresses that are meant to
contain 0xFF, can be skipped. See
When a new byte has been written and is being programmed into EEPROM, reading the
address location being programmed will give the value 0xFF. At the time the device is ready for
a new byte, the programmed value will read correctly. This is used to determine when the next
byte can be written. This will not work for the value 0xFF, but the user should have the following
in mind: As a chip-erased device contains 0xFF in all locations, programming of addresses that
are meant to contain 0xFF, can be skipped. This does not apply if the EEPROM is re-pro-
grammed without chip erasing the device. In this case, data polling cannot be used for the value
0xFF, and the user will have to wait at least t
Table 4-127 on page 316
3. The serial programming instructions will not work if the communication is out of syn-
4. The Flash is programmed one page at a time. The memory page is loaded one byte at
5. The EEPROM array is programmed one byte at a time by supplying the address and
6. Any memory location can be verified by using the Read instruction which returns the
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
chronization. When in sync. the second byte (0x53), will echo back when issuing the
third byte of the Programming Enable instruction. Whether the echo is correct or not, all
four bytes of the instruction must be transmitted. If the 0x53 did not echo back, give
RESET a positive pulse and issue a new Programming Enable command.
a time by supplying the 6 LSB of the address and data together with the Load Program
Memory Page instruction. To ensure correct loading of the page, the data low byte must
be loaded before data high byte is applied for a given address. The Program Memory
Page is stored by loading the Write Program Memory Page instruction with the 8 MSB
of the address. If polling is not used, the user must wait at least t
the next page (see
face before the Flash write operation completes can result in incorrect programming.
data together with the appropriate Write instruction. An EEPROM memory location is
first automatically erased before new data is written. If polling is not used, the user must
wait at least t
a chip erased device, no 0xFFs in the data file(s) need to be programmed.
content at the selected address at serial output MISO.
operation.
Set RESET to “1”.
Turn V
CC
power off.
WD_EEPROM
Table 4-127 on page
for t
before issuing the next byte (see
WD_EEPROM
Table 4-127 on page 316
value.
WD_EEPROM
316). Accessing the serial programming inter-
WD_FLASH
before programming the next byte. See
before programming the next page. As
ATA6602/ATA6603
for t
Table 4-127 on page
WD_FLASH
WD_FLASH
value.
before issuing
316). In
315