CYIS1SM1000-EVAL Cypress Semiconductor Corp, CYIS1SM1000-EVAL Datasheet - Page 7

• Manufacturer Part Number: CYIS1SM1000-EVAL
• Description: MCU, MPU & DSP Development Tools 1M Pixel Radiation Hard CMOS Img Snsr
• Manufacturer: Cypress Semiconductor Corp

Specifications of CYIS1SM1000-EVAL

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2.
Parameter
Detector technology
Pixel structure
Photodiode
Sensitive area
format
Pixel size
Pixel output rate
Windowing
Electronic shutter
Total Dose
Radiation tolerance
Expected Equivalent
fluence at 10 MeV
SEL threshold
Parameter
Spectral range
Quantum efficiency x
fill factor
Full well capacity
Cypress Semiconductor Corporation 3901 North First Street
Contact:
2.1.
2.2.
STAR-1000
Datasheet
Image sensor specifications
[e-mail]
General specifications
Electro-optical specifications
Table 2: Electro-optical specifications of the STAR-1000 sensor
Table 1: General specification of the STAR-1000 sensor
Specification
X- and Y- addressing random
CMOS Active Pixel Sensor
High fill factor photodiode
Electronic rolling shutter.
3-transistor active pixel
> 28 MeV cm
1024 x 1024 pixels
3.10
Range: 1 : 1024
Document #:38-05714 Rev.**(Revision 6.5)
> 230Krad (Si)
programmable
Typical value
15 x15 µm
400 - 1000
10
12 MHz
135.000
proton/cm
20%
Value
3
2
mg
2
-1
Comment
Using N-well technique
Speed can be exchanged for power
consumption
Integration time is variable in time steps
equal to the row readout time.
Pixel test structures with a similar design
have shown total dose tolerance up to
several Mrad. Radiation tests on similar
image sensor were performed up to 230
Krad.
TBD.
A similar design was tested up to 28 MeV
without any latch up noticeable.
No other evaluations have been done yet.
Unit
Radiation-tolerant pixel design.
nm
e-
San Jose, CA 95134 408-943-2600
Comment
Average over the visual range. See
spectral response curve.
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