SI4818DY-T1-E3 Vishay, SI4818DY-T1-E3 Datasheet - Page 6

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SI4818DY-T1-E3

Manufacturer Part Number
SI4818DY-T1-E3
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
Vishay
Series
LITTLE FOOT®r
Datasheet

Specifications of SI4818DY-T1-E3

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 6.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.3A, 7A
Vgs(th) (max) @ Id
800mV @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Power - Max
1W, 1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohm @ 10 V @ Channel 1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.3 A @ Channel 1 or 7 A @ Channel 2
Power Dissipation
1000 mW @ Channel 1 or 1250 mW @ Channel 2
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4818DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 933
Part Number:
SI4818DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4818DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.6
0.4
0.2
0.0
10
40
10
8
6
4
2
0
1
- 50
0
0
- 25
V
I
D
Source-Drain Diode Forward Voltage
0.2
DS
= 9.5 A
= 15 V
6
V
Q
SD
0
T
0.4
g
J
Threshold Voltage
T
- Total Gate Charge (nC)
- Source-to-Drain Voltage (V)
= 150 °C
J
- Temperature (°C)
Gate Charge
25
12
0.6
50
I
D
0.8
= 250 µA
18
T
75
J
= 25 °C
1.0
100
24
1.2
125
150
1.4
30
0.05
0.04
0.03
0.02
0.01
0.00
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
60
40
20
0
- 50
0.001
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
= 9.5 A
= 10 V
2
V
0.01
GS
0
T
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
Time (s)
S09-0867-Rev. C, 18-May-09
0.1
50
Document Number: 71122
6
75
I
D
100
= 9.5 A
1
8
125
150
10
10

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