SI4818DY-T1-E3 Vishay, SI4818DY-T1-E3 Datasheet - Page 3

no-image

SI4818DY-T1-E3

Manufacturer Part Number
SI4818DY-T1-E3
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
Vishay
Series
LITTLE FOOT®r
Datasheet

Specifications of SI4818DY-T1-E3

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 6.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.3A, 7A
Vgs(th) (max) @ Id
800mV @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Power - Max
1W, 1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohm @ 10 V @ Channel 1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.3 A @ Channel 1 or 7 A @ Channel 2
Power Dissipation
1000 mW @ Channel 1 or 1250 mW @ Channel 2
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4818DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 933
Part Number:
SI4818DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71122
S09-0867-Rev. C, 18-May-09
0.05
0.04
0.03
0.02
0.01
0.00
30
24
18
12
10
6
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 6.3 A
On-Resistance vs. Drain Current
V
= 15 V
GS
2
6
3
V
= 10 V thru 4 V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
12
4
6
1 V
3 V
V
GS
18
= 4.5 V
6
9
V
GS
2 V
= 10 V
24
12
8
10
30
15
1000
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
30
24
18
12
0
6
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
V
I
- 25
D
rss
0.5
GS
= 6.3 A
= 10 V
6
V
V
1.0
DS
GS
Transfer Characteristics
T
0
J
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
iss
25 °C
C
T
oss
C
1.5
25
Capacitance
= 125 °C
12
2.0
50
Vishay Siliconix
18
2.5
75
- 55 °C
Si4818DY
www.vishay.com
100
3.0
24
125
3.5
150
4.0
30
3

Related parts for SI4818DY-T1-E3