si4818dy Vishay, si4818dy Datasheet

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si4818dy

Manufacturer Part Number
si4818dy
Description
Dual N-channel 30-v D-s Mosfet With Schottky Diode
Manufacturer
Vishay
Datasheet

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si4818dy-T1
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si4818dy-T1-E3
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Notes
a.
Document Number: 71122
S-31062—Rev. B, 26-May-03
Ordering Information: Si4818DY
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Channel 1
Channel-1
Channel 2
Channel-2
Surface Mounted on 1” x 1” FR4 Board.
V
i
DS
30
G
G
S
S
(V)
J
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
1
1
2
2
ti
1
2
3
4
t A bi
V
DS
Parameter
Parameter
Si4818DY-T1 (with Tape and Reel)
Top View
30
30
Diode Forward Voltage
SO-8
(V)
J
J
a
a
= 150_C)
= 150_C)
t
a
a
0.50 V @ 1.0 A
V
SD
0.0205 @ V
8
7
6
5
0.0155 @ V
a
a
0.030 @ V
0.022 @ V
(V)
r
DS(on)
D
D
D
D
1
2
2
2
Steady-State
Steady-State
a
t v 10 sec
T
T
T
T
A
A
A
A
GS
GS
GS
GS
= 25_C
= 70_C
= 25_C
= 70_C
(W)
= 4.5 V
= 10 V
= 4.5 V
= 10 V
A
Symbol
Symbol
= 25_C UNLESS OTHERWISE NOTED)
T
R
R
R
V
J
V
I
P
P
, T
I
I
DM
I
thJA
thJC
I
DS
GS
D
D
S
F
D
D
stg
I
2.0
D
(A)
6.3
5.4
9.5
8.2
(A)
G
1
10 secs
Typ
100
72
51
Channel-1
6.3
5.4
1.3
1.4
0.9
N-Channel 1
MOSFET
Channel-1
D
S
1
1
Max
125
30
90
63
Steady State
0.64
5.3
4.2
0.9
1.0
Typ
43
82
25
Channel-2
- 55 to 150
G
30
20
2
10 secs
Max
100
53
30
9.5
7.6
2.2
2.4
1.5
D
2
Channel-2
S
N-Channel 2
2
MOSFET
D
Vishay Siliconix
Typ
2
40
48
80
28
Steady State
Schottky
D
A
2
1.15
1.25
0.80
Schottky Diode
7.0
5.6
Si4818DY
Max
100
60
35
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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si4818dy Summary of contents

Page 1

... Top View Ordering Information: Si4818DY Si4818DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si4818DY Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate Threshold Voltage Gate Body Leakage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current b b Drain-Source On-State Resistance Drain Source On State Resistance ...

Page 3

... Q - Total Gate Charge (nC) g Document Number: 71122 S-31062—Rev. B, 26-May- 1000 800 600 400 GS 200 Si4818DY Vishay Siliconix CHANNEL−1 Transfer Characteristics 125_C C 6 25_C - 55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS ...

Page 4

... Si4818DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0 250 mA D 0.2 - 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www ...

Page 5

... I - Drain Current (A) D Document Number: 71122 S-31062—Rev. B, 26-May- Square Wave Pulse Duration (sec 2500 2000 1500 1000 32 40 Si4818DY Vishay Siliconix CHANNEL− CHANNEL−2 Transfer Characteristics 125_C 25_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 ...

Page 6

... Si4818DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 9 Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0 250 mA D 0.2 - 0.0 - 0.2 - 0.4 - 0.6 - 0 ...

Page 7

... Document Number: 71122 S-31062—Rev. B, 26-May-03 Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot -2 10 Square Wave Pulse Duration (sec) Si4818DY Vishay Siliconix CHANNEL−2 Notes Duty Cycle ...

Page 8

... Si4818DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 0 0.01 0.001 0.0001 Temperature (_C) J Capacitance 200 160 120 80 C oss Drain-to-Source Voltage (V) DS www.vishay.com 8 100 125 150 SCHOTTKY Forward Voltage Drop ...

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