SI4818DY-T1-E3 Vishay, SI4818DY-T1-E3 Datasheet

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SI4818DY-T1-E3

Manufacturer Part Number
SI4818DY-T1-E3
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
Vishay
Series
LITTLE FOOT®r
Datasheet

Specifications of SI4818DY-T1-E3

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 6.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.3A, 7A
Vgs(th) (max) @ Id
800mV @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Power - Max
1W, 1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohm @ 10 V @ Channel 1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.3 A @ Channel 1 or 7 A @ Channel 2
Power Dissipation
1000 mW @ Channel 1 or 1250 mW @ Channel 2
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4818DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 933
Part Number:
SI4818DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Ordering Information:
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71122
S09-0867-Rev. C, 18-May-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
Channel-1
Channel-2
SCHOTTKY PRODUCT SUMMARY
V
DS
30
(V)
G
G
S
S
1
1
2
2
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
1
2
3
4
V
DS
30
(V)
Si4818DY -T1-E3
Si4818DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Diode Forward Voltage
Top View
SO-8
0.50 V at 1.0 A
0.0205 at V
0.0155 at V
0.030 at V
0.022 at V
V
J
a
SD
= 150 °C)
a
R
(V)
DS(on)
8
7
6
5
(Lead (Pb)-free)
GS
GS
GS
GS
D
D
D
D
(Ω)
1
2
2
2
= 4.5 V
a
= 10 V
= 4.5 V
= 10 V
Steady State
Steady State
a
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A
= 25 °C, unless otherwise noted
I
I
D
F
6.3
5.4
9.5
8.2
2.0
(A)
(A)
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
I
I
thJA
thJC
DS
GS
D
S
D
stg
FEATURES
G
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT
• Compliant to RoHS directive 2002/95/EC
1
Definition
Typ.
100
72
51
Channel-1
10 s
6.3
5.4
1.3
1.4
0.9
N-Channel 1
MOSFET
Channel-1
D
S
Max.
1
1
125
90
63
30
Steady State
®
0.64
5.3
4.2
0.9
1.0
Plus
Typ.
43
82
25
- 55 to 150
Channel-2
30
20
G
2
Max.
100
53
30
10 s
9.5
7.6
2.2
2.4
1.5
Channel-2
Vishay Siliconix
Typ.
48
80
28
40
S
Steady State
N-Channel 2
Schottky
2
MOSFET
D
2
Si4818DY
1.15
1.25
0.80
7.0
5.6
A
Max.
www.vishay.com
100
60
35
Schottky Diode
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI4818DY-T1-E3

SI4818DY-T1-E3 Summary of contents

Page 1

... Top View Si4818DY -T1-E3 Ordering Information: (Lead (Pb)-free) Si4818DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4818DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... Drain Current (A) D On-Resistance vs. Drain Current 6 Total Gate Charge (nC) g Gate Charge Document Number: 71122 S09-0867-Rev. C, 18-May- 4 Si4818DY Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 1000 800 C iss 600 400 C oss 200 C rss ...

Page 4

... Si4818DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 I 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 ...

Page 5

... I - Drain Current (A) D On-Resistance vs. Drain Current Document Number: 71122 S09-0867-Rev. C, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 4 Si4818DY Vishay Siliconix - 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 2500 ...

Page 6

... Si4818DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 9 Total Gate Charge (nC) g Gate Charge 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 I 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 6 18 ...

Page 7

... Single Pulse 0. Document Number: 71122 S09-0867-Rev. C, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4818DY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( ...

Page 8

... Si4818DY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.1 0.01 0.001 0.0001 Temperature (°C) J Reverse Current vs. Junction Temperature Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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