SI4818DY-T1-E3 Vishay, SI4818DY-T1-E3 Datasheet
SI4818DY-T1-E3
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SI4818DY-T1-E3 Summary of contents
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... Top View Si4818DY -T1-E3 Ordering Information: (Lead (Pb)-free) Si4818DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si4818DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...
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... Drain Current (A) D On-Resistance vs. Drain Current 6 Total Gate Charge (nC) g Gate Charge Document Number: 71122 S09-0867-Rev. C, 18-May- 4 Si4818DY Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 1000 800 C iss 600 400 C oss 200 C rss ...
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... Si4818DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 I 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 ...
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... I - Drain Current (A) D On-Resistance vs. Drain Current Document Number: 71122 S09-0867-Rev. C, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 4 Si4818DY Vishay Siliconix - 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 2500 ...
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... Si4818DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 9 Total Gate Charge (nC) g Gate Charge 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 I 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 6 18 ...
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... Single Pulse 0. Document Number: 71122 S09-0867-Rev. C, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4818DY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( ...
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... Si4818DY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.1 0.01 0.001 0.0001 Temperature (°C) J Reverse Current vs. Junction Temperature Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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