ZXMN3AMCTA Diodes Zetex, ZXMN3AMCTA Datasheet - Page 6

• Manufacturer Part Number: ZXMN3AMCTA
• Description: MOSFET 2N-CH 30V 2.9A DFN
• Manufacturer: Diodes Zetex

Specifications of ZXMN3AMCTA

• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN3AMCTATR

Typical Electrical Characteristics - Continued
Test Circuits
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
90%
10%
V
V
GS
DS
V
G
Capacitance v Drain-Source Voltage
300
250
200
150
100
50
0
0.1
Q
GS
t
Basic gate charge waveform
d(on)
Switching time waveforms
V
t
DS
(on)
t
r
- Drain - Source Voltage (V)
Q
Q
G
GD
1
Charge
C
ISS
t
d(off)
C
OSS
t
(on)
C
V
f = 1MHz
RSS
GS
t
r
10
= 0V
www.diodes.com
6 of 8
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
0
Switching time test circuit
I
D
Gate charge test circuit
= 2.5A
12V
R
Diodes Incorporated
1
G
Q - Charge (nC)
A Product Line of
V
regulator
Current
GS
50k
I
2
G
V
GS
V
DS
R
Same as
D.U.T
= 15V
D
D.U.T
3
ZXMN3AMC
V
DS
© Diodes Incorporated
December 2010
I
V
D
DS
4
V
DD