ZXMN3AMCTA Diodes Zetex, ZXMN3AMCTA Datasheet - Page 3

• Manufacturer Part Number: ZXMN3AMCTA
• Description: MOSFET 2N-CH 30V 2.9A DFN
• Manufacturer: Diodes Zetex

Specifications of ZXMN3AMCTA

• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN3AMCTATR

Thermal Characteristics
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
100m
10m
Power Dissipation v Board Area
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
80
60
40
20
100µ
1
0
0.1
Transient Thermal Impedance
8 sq cm 2oz Cu
One active die
Single Pulse, T
T
T
Continuous
8 sq cm 2oz Cu
One active die
D=0.5
D=0.2
DC
amb
j max
V
R
Limited
1m
DS
=25°C
=150°C
2oz Cu
One active die
DS(on)
Safe Operating Area
1s
Drain-Source Voltage (V)
100ms
Board Cu Area (sqcm)
1
10m 100m
amb
Pulse Width (s)
=25°C
1
1oz Cu
One active die
10ms
2oz Cu
Two active die
1ms
D=0.1
1
D=0.05
Single Pulse
100us
10
10
10
1oz Cu
Two active die
100
www.diodes.com
100
1k
3 of 8
225
200
175
150
125
100
2.0
1.5
1.0
0.5
0.0
75
50
25
Thermal Resistance v Board Area
0
0.1
0
2oz Cu
One active die
25
Board Cu Area (sqcm)
Derating Curve
Diodes Incorporated
Temperature (°C)
50
A Product Line of
1
10 sq cm 1oz Cu
Two active die
1oz Cu
One active die
2oz Cu
Two active die
75
8 sq cm 2oz Cu
One active die
100
10
10 sq cm 1oz Cu
One active die
1oz Cu
Two active die
125
ZXMN3AMC
150
© Diodes Incorporated
December 2010
100