ZXMN3AMCTA Diodes Zetex, ZXMN3AMCTA Datasheet - Page 5

• Manufacturer Part Number: ZXMN3AMCTA
• Description: MOSFET 2N-CH 30V 2.9A DFN
• Manufacturer: Diodes Zetex

Specifications of ZXMN3AMCTA

• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN3AMCTATR

Typical Electrical Characteristics
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
Typical Transfer Characteristics
0.1
0.1
On-Resistance v Drain Current
0.1
10
10
1
1
1
2.0
T = 150°C
T = 25°C
V
T = 25°C
0.1
DS
V
V
= 10V
2.5
DS
GS
2.5V
Output Characteristics
0.1
Drain-Source Voltage (V)
Gate-Source Voltage (V)
I
D
T = 25°C
3.0
Drain Current (A)
10V
1
3.5
3V
1
7V
3.5V
4.0
5V
4V
4.5
4.5V
10
10
5V
4V
3V
V
4.5V
3.5V
2.5V
V
GS
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7V
GS
10V
5.0
5 of 8
Source-Drain Diode Forward Voltage
Normalised Curves v Temperature
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
-50
0.4
T = 150°C
T = 150°C
0.1
V
V
Tj Junction Temperature (°C)
DS
SD
Output Characteristics
0.6
Diodes Incorporated
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
A Product Line of
1
10V
0.8
V
I
50
D
T = 25°C
GS
= 2.5A
V
I
D
GS
= 10V
= 250uA
= V
7V
DS
100
1.0
5V
ZXMN3AMC
R
10
V
DS(on)
GS(th)
3.5V
4.5V
3V
4V
V
2V
2.5V
© Diodes Incorporated
GS
December 2010
150
1.2