ZXMN3AMCTA Diodes Zetex, ZXMN3AMCTA Datasheet - Page 4

• Manufacturer Part Number: ZXMN3AMCTA
• Description: MOSFET 2N-CH 30V 2.9A DFN
• Manufacturer: Diodes Zetex

Specifications of ZXMN3AMCTA

• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN3AMCTATR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 10)
Forward Transconductance (Note 10 & 11)
Diode Forward Voltage (Note 10)
Reverse Recover Time (Note 11)
Reverse Recover Charge (Note 11)
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 12)
Total Gate Charge (Note 12)
Gate-Source Charge (Note 12)
Gate-Drain Charge (Note 12)
Turn-On Delay Time (Note 12)
Turn-On Rise Time (Note 12)
Turn-Off Delay Time (Note 12)
Turn-Off Fall Time (Note 12)
Notes:
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
10. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperature.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
www.diodes.com
t
t
I
I
DS(ON)
C
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
Q
g
Q
Q
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
4 of 8
Min
1.0
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.100
0.140
0.85
17.7
13.0
Typ
190
3.5
2.3
3.9
0.6
0.9
1.7
2.3
6.6
2.9
38
20
-
-
-
-
0.120
0.180
±100
Max
0.95
0.5
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Diodes Incorporated
A Product Line of
Unit
nC
nC
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
Ω
S
V
I
V
V
I
V
V
V
I
I
V
f = 1.0MHz
V
V
V
V
D
D
S
S
DS
GS
GS
GS
DS
DS
GS
GS
DS
GS
= 250μA, V
= 250μA, V
= 1.7A, V
= 2.5A, di/dt = 100A/µs
= 30V, V
= ±20V, V
= 10V, I
= 4.5V, I
= 10V, I
= 25V, V
= 4.5V
= 10V
= 15V, I
= 10V, R
Test Condition
ZXMN3AMC
GS
D
D
D
D
GS
GS
G
GS
DS
= 2.5A
= 2.5A
= 2.5A
DS
= 2.0A
= 0V
= 6Ω
= 0V
= 0V,
© Diodes Incorporated
= 0V
= V
V
I
December 2010
= 0V
D
DS
= 2.5A
GS
= 15V