TCDT1101G Vishay, TCDT1101G Datasheet - Page 5

Optocoupler

TCDT1101G

Manufacturer Part Number
TCDT1101G
Description
Optocoupler
Manufacturer
Vishay
Datasheets

Specifications of TCDT1101G

Leaded Process Compatible
Yes
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Transistor
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
32 V
Maximum Collector Emitter Saturation Voltage
300 mV
Isolation Voltage
3750 Vrms
Current Transfer Ratio
80 %
Maximum Forward Diode Voltage
1.6 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-6
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
50mA
Output Voltage
32V
Opto Case Style
DIP
No. Of Pins
6
Approval Bodies
UL
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Switching Characteristics
Document Number 83535
Rev. 1.6, 26-Oct-04
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
95 10843
95 10900
0
R
0
R
t
t
T
T
p
p
t
t
Figure 3. Test circuit, non-saturated operation
G
G
p
p
Parameter
= 0.01
= 0.01
= 50 s
= 50 s
= 50 W
= 50 Ω
Figure 4. Test circuit, saturated operation
I
I
F
F
µ
50 W
50
I
I
F
F
= 10 mA
100 W
1 k
V
(see figure 3)
V
(see figure 3)
V
(see figure 3)
V
(see figure 3)
V
(see figure 3)
V
(see figure 3)
V
(see figure 4)
V
(see figure 4)
S
S
S
S
S
S
S
S
+ 5 V
I
+ 5 V
C
I
Channel II
Channel II
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
Channel I
Channel I
C
= 5 mA; adjusted through
Test condition
C
C
C
C
C
C
F
F
= 5 mA, R
= 5 mA, R
= 5 mA, R
= 5 mA, R
= 5 mA, R
= 5 mA, R
= 10 mA, R
= 10 mA, R
input amplitude
Oscilloscope
R
C
Oscilloscope
R
C
L
L
L
L
1
1 MW
20 pF
20 pF
L
L
L
L
L
L
M
L
L
= 100 Ω
= 100 Ω
= 100 Ω
= 100 Ω
= 100 Ω
= 100 Ω
= 1 kΩ
= 1 kΩ
Symbol
t
t
t
t
p
d
r
on
t
t
t
t
(= t
TCDT1100/ TCDT1100G
t
t
t
t
on
off
on
off
d
s
r
f
100%
10%
90%
d
+ t
I
I
C
F
0
0
r
)
t
pulse duration
delay time
rise time
turn-on time
d
t
on
Min
t
r
Figure 5. Switching Times
t
p
Vishay Semiconductors
11.0
25.0
42.5
Typ.
4.0
7.0
6.7
0.3
7.0
t
t
t
t
s
f
off
s
(= t
s
t
off
+ t
t
f
f
)
Max
storage time
fall time
turn-off time
96 11698
t
t
www.vishay.com
Unit
µs
µs
µs
µs
µs
µs
µs
µs
5

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