TCDT1101G Vishay, TCDT1101G Datasheet - Page 3

Optocoupler

TCDT1101G

Manufacturer Part Number
TCDT1101G
Description
Optocoupler
Manufacturer
Vishay
Datasheets

Specifications of TCDT1101G

Leaded Process Compatible
Yes
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Transistor
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
32 V
Maximum Collector Emitter Saturation Voltage
300 mV
Isolation Voltage
3750 Vrms
Current Transfer Ratio
80 %
Maximum Forward Diode Voltage
1.6 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-6
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
50mA
Output Voltage
32V
Opto Case Style
DIP
No. Of Pins
6
Approval Bodies
UL
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Coupler
Current Transfer Ratio
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
Input
Output
Coupler
Insulation Rated Parameters
Document Number 83535
Rev. 1.6, 26-Oct-04
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Collector emitter saturation
voltage
Cut-off frequency
Coupling capacitance
I
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
Partial discharge test voltage -
Routine test
Partial discharge test voltage -
Lot test (sample test)
C
/I
F
Parameter
Parameter
Parameter
Parameter
Parameter
Parameter
I
V
R
f = 1 MHz
V
100 %, t
t
(see figure 2)
F
Tr
CE
CE
L
= 10 mA, I
= 60 s, t
= 100 Ω
= 5 V, I
= 5 V, I
test
Test condition
Test condition
Test condition
Test condition
Test condition
Test condition
test
F
F
= 1 s
C
= 10 mA,
= 10 mA
= 10 s,
= 1 mA
Symbol
Symbol
Symbol
Symbol
Symbol
TCDT1100G
TCDT1101G
TCDT1102G
TCDT1103G
V
V
V
TCDT1100
TCDT1101
TCDT1102
TCDT1103
P
CEsat
V
V
IOTM
IOTM
C
T
TCDT1100/ TCDT1100G
f
I
diss
F
pd
pd
c
si
k
Part
Min
Min
Min
Min
Min
1.6
1.3
6
Symbol
CTR
CTR
CTR
CTR
Vishay Semiconductors
Typ.
110
Typ.
Typ.
Typ.
Typ.
Min
100
0.3
40
40
63
Typ.
Max
Max
Max
Max
Max
130
265
150
0.3
6
Max
www.vishay.com
125
200
80
Unit
kHz
Unit
Unit
mW
Unit
Unit
mA
pF
kV
kV
kV
kV
°C
V
Unit
%
%
%
%
3

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