TCDT1101G Vishay, TCDT1101G Datasheet - Page 4

• Manufacturer Part Number: TCDT1101G
• Description: Optocoupler
• Manufacturer: Vishay

Specifications of TCDT1101G

• Leaded Process Compatible: Yes
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 32 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 80 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 32V
• Opto Case Style: DIP
• No. Of Pins: 6
• Approval Bodies: UL
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TCDT1100/ TCDT1100G
Vishay Semiconductors
www.vishay.com
4
Insulation resistance
94 9182
300
250
200
150
100
50
0
0
Parameter
25
T
si
Figure 1. Derating diagram
– Safety Temperature ( °C )
IR-Diode
Isi ( mA )
50
Phototransistor
Psi ( mW )
75
100
V
V
V
(construction test only)
IO
IO
IO
= 500 V
= 500 V, T
= 500 V, T
125
Test condition
150
amb
amb
= 100 °C
= 150 °C
Figure 2. Test pulse diagram for sample test according to DIN EN
Symbol
13930
R
R
R
V
V
V
IOWM
IO
IO
IO
IOTM
IORM
V
Pd
0
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
t
1
10
10
Min
10
12
11
9
t
t
t
1
3
stres
t
test
, t
, t
2
4
t
Tr
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
Typ.
Document Number 83535
Max
t
2
t
3
Rev. 1.6, 26-Oct-04
t
t
stres
test
t
t
4
Unit
Ω
Ω
Ω