TCDT1101G Vishay, TCDT1101G Datasheet - Page 2

• Manufacturer Part Number: TCDT1101G
• Description: Optocoupler
• Manufacturer: Vishay

Specifications of TCDT1101G

• Leaded Process Compatible: Yes
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 32 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 80 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 32V
• Opto Case Style: DIP
• No. Of Pins: 6
• Approval Bodies: UL
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TCDT1100/ TCDT1100G
Vishay Semiconductors
Absolute Maximum Ratings
T
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Electrical Characteristics
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
www.vishay.com
2
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
Forward voltage
Junction capacitance
Collector emitter voltage
Emitter collector voltage
Collector-emitter cut-off current
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
Parameter
Parameter
t
t
2 mm from case t ≤ 10 s
I
V
I
I
V
p
p
F
C
E
R
CE
/T = 0.5, t
≤ 10 µs
= 50 mA
= 100 µA
= 1 mA
= 0, f = 1 MHz
= 20 V, I
Test condition
Test condition
Test condition
Test condition
Test condition
p
≤ 10 ms
f
= 0, E = 0
Symbol
Symbol
V
V
I
CEO
V
CEO
ECO
C
F
j
Symbol
Symbol
Symbol
V
V
P
P
T
I
V
T
I
P
T
FSM
V
CEO
ECO
CM
amb
T
I
T
I
diss
diss
ISO
stg
sld
F
C
tot
R
j
j
Min
Min
32
7
- 55 to + 100
- 55 to + 125
Value
Value
Value
3750
1.25
Typ.
Typ.
200
100
125
100
150
125
250
260
60
32
50
50
5
3
7
Document Number 83535
Max
Max
1.6
Rev. 1.6, 26-Oct-04
V
Unit
mW
Unit
mW
Unit
mW
mA
mA
mA
°C
°C
°C
°C
°C
RMS
V
A
V
V
Unit
Unit
pF
nA
V
V
V