SI8435DB-T1-E1 Vishay, SI8435DB-T1-E1 Datasheet - Page 6

P CH MOSFET, -20V, 10A, MICRO FOOT

SI8435DB-T1-E1

Manufacturer Part Number
SI8435DB-T1-E1
Description
P CH MOSFET, -20V, 10A, MICRO FOOT
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI8435DB-T1-E1

Transistor Polarity
P Channel
Continuous Drain Current Id
-10A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
75mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
-1V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
41 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 5V
Input Capacitance (ciss) @ Vds
1600pF @ 10V
Power - Max
6.25W
Mounting Type
Surface Mount
Package / Case
4-MICRO FOOT®CSP
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.041 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 5 V
Continuous Drain Current
6.72 A
Power Dissipation
2.78 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI8435DB-T1-E1TR
Si8435DB
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
A
= 25 °C, unless otherwise noted
10
-2
Square W ave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
t
A
1
= P
S-82119-Rev. D, 08-Sep-08
t
2
Document Number: 73559
DM
Z
th JA
thJA
100
t
t
1
2
(t)
= 72 °C/W
600
10

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