SI8435DB-T1-E1 Vishay, SI8435DB-T1-E1 Datasheet - Page 6

• Manufacturer Part Number: SI8435DB-T1-E1
• Description: P CH MOSFET, -20V, 10A, MICRO FOOT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8435DB-T1-E1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -10A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -1V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 10V
• Power - Max: 6.25W
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.041 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 6.72 A
• Power Dissipation: 2.78 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI8435DB-T1-E1TR

Si8435DB
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
A
= 25 °C, unless otherwise noted
10
-2
Square W ave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
t
A
1
= P
S-82119-Rev. D, 08-Sep-08
t
2
Document Number: 73559
DM
Z
th JA
thJA
100
t
t
1
2
(t)
= 72 °C/W
600
10