SI8435DB-T1-E1 Vishay, SI8435DB-T1-E1 Datasheet

P CH MOSFET, -20V, 10A, MICRO FOOT

SI8435DB-T1-E1

Manufacturer Part Number
SI8435DB-T1-E1
Description
P CH MOSFET, -20V, 10A, MICRO FOOT
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI8435DB-T1-E1

Transistor Polarity
P Channel
Continuous Drain Current Id
-10A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
75mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
-1V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
41 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 5V
Input Capacitance (ciss) @ Vds
1600pF @ 10V
Power - Max
6.25W
Mounting Type
Surface Mount
Package / Case
4-MICRO FOOT®CSP
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.041 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 5 V
Continuous Drain Current
6.72 A
Power Dissipation
2.78 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI8435DB-T1-E1TR
Notes:
a. Based on T
b. Surface Mounted on 1” x 1” FR4 board.
c. t = 10 s.
d. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump.
Document Number: 73559
S-82119-Rev. D, 08-Sep-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditions
V
3
4
DS
- 20
Bump Side V iew
D
S
(V)
C
0.041 at V
0.048 at V
0.058 at V
0.075 at V
= 25 °C.
D
G
R
MICRO FOOT
2
1
DS(on)
GS
GS
GS
GS
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 1.5 V
d
J
= 150 °C)
Backside V iew
8435
XXX
P-Channel 1.5-V (G-S) MOSFET
I
- 10.0
- 9.32
- 8.48
- 7.45
D
(A)
a
A
Q
Device Marking:
Ordering Information:
= 25 °C, unless otherwise noted
IR/Convection
g
22 nC
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
8435
xxx = Date/Lot T raceability Code
FEATURES
APPLICATIONS
Symbol
T
TrenchFET
Ultra Small MICRO FOOT
Packaging Reduces Footprint Area, Profile
(0.62 mm) and On-Resistance Per Footprint Area
Low Threshold Load Switch for Portable Devices
- Low Power Consumption
- Increased Battery Life
J
Si8435DB-T1-E1 (Lead (Pb)-free)
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
stg
®
Power MOSFET
- 55 to 150
- 6.72
- 5.37
- 2.31
2.78
1.78
- 10.0
- 8.06
- 5.21
Limit
6.25
- 20
- 15
260
± 5
4.0
®
b,c
b,c
b,c
b,c
b,c
Chipscale
G
P-Channel MOSFET
Vishay Siliconix
Si8435DB
S
D
www.vishay.com
Unit
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for SI8435DB-T1-E1

SI8435DB-T1-E1 Summary of contents

Page 1

... On-Resistance Per Footprint Area 8.48 APPLICATIONS - 7.45 • Low Threshold Load Switch for Portable Devices - Low Power Consumption - Increased Battery Life Device Marking: 8435 xxx = Date/Lot T raceability Code Ordering Information: Si8435DB-T1-E1 (Lead (Pb)-free °C, unless otherwise noted A Symbol ° °C ...

Page 2

... Si8435DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a,b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1“ x 1“ FR4 board. b. Maximum under Steady State conditions is 72 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Drain-Source Breakdown Voltage ΔV ...

Page 3

... Document Number: 73559 S-82119-Rev. D, 08-Sep-08 Test Conditions ° dI/dt = 100 A/µ °C, unless otherwise noted 1 2.4 3.0 Si8435DB Vishay Siliconix Min. Typ. Max 0.6 1.2 116 174 203 305 = 25 ° 0.0 0.3 0.6 0 Gate-to-Source Voltage (V) GS Transfer Characteristics www.vishay.com Unit 1.2 1 ...

Page 4

... Si8435DB Vishay Siliconix TYPICAL CHARACTERISTICS T 0.12 0. Drain Current ( vs. Drain Current DS(on) 2500 2000 C iss 1500 1000 500 C oss C rss Drain-Source Voltage (V) DS Capacitance Total Gate Charge (nC) g Gate Charge www.vishay.com °C, unless otherwise noted 1 1 4 ...

Page 5

... The power dissipation P junction-to-foot thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is 10 100 used used to determine the current rating, when this rating falls below the package limit. is specified DS(on) Si8435DB Vishay Siliconix 100 T - Case Temperature (° ...

Page 6

... Si8435DB Vishay Siliconix TYPICAL CHARACTERISTICS Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot www.vishay.com °C, unless otherwise noted ...

Page 7

... Diameter E a Millimeters Min. Max. 0.600 0.650 0.260 0.290 0.340 0.360 0.370 0.410 1.520 1.600 1.520 1.600 0.750 0.850 0.370 0.380 Si8435DB Vishay Siliconix Silicon Bump Note Inches Min. Max. 0.0236 0.0256 0.0102 0.0114 0.0134 0.0142 0.0146 0.0161 0.0598 0.0630 0.0598 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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