SI8435DB-T1-E1 Vishay, SI8435DB-T1-E1 Datasheet - Page 5

• Manufacturer Part Number: SI8435DB-T1-E1
• Description: P CH MOSFET, -20V, 10A, MICRO FOOT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8435DB-T1-E1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -10A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -1V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 10V
• Power - Max: 6.25W
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.041 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 6.72 A
• Power Dissipation: 2.78 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI8435DB-T1-E1TR

TYPICAL CHARACTERISTICS T
Document Number: 73559
S-82119-Rev. D, 08-Sep-08
0.001
0.01
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
80
60
40
20
0.1
10
0
1
0.001
- 50
0.1
Single Pulse Power, Juncion-to-Ambient
Limited by R
* V
Safe Operating Area, Junction-to-Ambient
- 25
GS
T
Single Pulse
A
= 25 °C
> minimum V
V
0.01
0
DS
DSon
Threshold Voltage
T
- Drain-to-Source Voltage (V)
J
1
*
- Temperature (°C)
25
GS
Time (s)
BVDSS Limited
0.1
at which R
50
I
DM
Limited
75
10
DS(on)
100
A
1
is
= 25 °C, unless otherwise noted
P (t) = 100 ms
P (t) = 10 ms
P (t) = 1 s
P (t) = 10 s
DC
specified
125
100
150
10
** The power dissipation P
junction-to-foot thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
12
8
4
0
8
6
4
2
0
0
0
25
25
D
T - Case Temperature (°C)
C
is based on T
Case T emperature ( °C)
50
50
Current Derating**
Power Derating
75
75
Vishay Siliconix
J(max)
Si8435DB
100
100
www.vishay.com
= 150 °C, using
125
125
150
150
5