SI8435DB-T1-E1 Vishay, SI8435DB-T1-E1 Datasheet - Page 4

• Manufacturer Part Number: SI8435DB-T1-E1
• Description: P CH MOSFET, -20V, 10A, MICRO FOOT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8435DB-T1-E1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -10A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -1V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 10V
• Power - Max: 6.25W
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.041 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 6.72 A
• Power Dissipation: 2.78 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI8435DB-T1-E1TR

Si8435DB
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.12
0.10
0.08
0.06
0.04
0.02
2500
2000
1500
1000
500
5
4
3
2
1
0
0
0
0
0
I D = 1 A
V
C
GS
rss
= 1.5 V
5
3
4
R
V
Q
DS(on)
DS
g
V
GS
- Total Gate Charge (nC)
I
- Drain-Source Voltage (V)
D
Gate Charge
Capacitance
= 1.8 V
- Drain Current (A)
10
V
6
vs. Drain Current
8
V
DS
GS
C
= 10 V
C
= 2.5 V
oss
V
iss
GS
= 4.5 V
15
9
12
V
DS
= 16 V
A
= 25 °C, unless otherwise noted
12
20
16
15
20
25
0.01
0.12
0.10
0.08
0.06
0.04
0.02
0.1
10
1.6
1.4
1.2
1.0
0.8
0.6
1
- 50
0.2
0
T = 150 °C
I D = 1 A
A
On-Resistance vs. Junction Temperature
- 25
Forward Diode Voltage vs. Temp.
V
1
R
0.4
SD
DS(on)
T
0
V
J
- Source-to-Drain Voltage (V)
GS
- Junction T emperature (°C)
- Gate-to-Source Voltage (V)
25
vs. V
T = 25 °C
2
A
0.6
GS
V
50
S-82119-Rev. D, 08-Sep-08
GS
Document Number: 73559
vs Temperature
= 4.5 V, 2.5 V
3
75
V
GS
T = 125 °C
T = 25 °C
A
A
= 1.8 V, 1.5 V
0.8
100
4
I
125
D
= 1 A
1.0
150
5