SI4134DY-T1-GE3 Vishay, SI4134DY-T1-GE3 Datasheet - Page 6
![N-CHANNEL 30-V (D-S) MOSFET](/photos/15/83/158327/soic-8_sml.jpg)
SI4134DY-T1-GE3
Manufacturer Part Number
SI4134DY-T1-GE3
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet
1.SI4134DY-T1-GE3.pdf
(7 pages)
Specifications of SI4134DY-T1-GE3
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
24 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.9 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Drain Source Voltage Vds
30V
On Resistance Rds(on)
11.5mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4134DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4134DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68999.
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.01
0.1
0.1
1
1
10
10
-4
0.05
-4
0.2
0.1
0.02
0.2
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
10
-3
0.02
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
0.05
This document is subject to change without notice.
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
S11-0650-Rev. C, 11-Apr-11
= P
t
2
Document Number: 68999
DM
www.vishay.com/doc?91000
100
Z
thJA
thJA
t
t
1
2
(t)
= 85 °C/W
1000
1
0