SI4134DY-T1-GE3 Vishay, SI4134DY-T1-GE3 Datasheet - Page 3
![N-CHANNEL 30-V (D-S) MOSFET](/photos/15/83/158327/soic-8_sml.jpg)
SI4134DY-T1-GE3
Manufacturer Part Number
SI4134DY-T1-GE3
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet
1.SI4134DY-T1-GE3.pdf
(7 pages)
Specifications of SI4134DY-T1-GE3
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
24 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.9 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Drain Source Voltage Vds
30V
On Resistance Rds(on)
11.5mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4134DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 68999
S11-0650-Rev. C, 11-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.025
0.020
0.015
0.010
0.005
50
40
30
20
10
10
0
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
0.0
0.0
0
I
V
D
DS
0.5
3.2
= 10 A
10
V
= 10 V
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
V
V
D
V
GS
GS
GS
- Drain Current (A)
Gate Charge
1.0
6.4
20
= 4.5 V
= 10 V
= 10 V thru 5 V
V
1.5
9.6
30
DS
= 15 V
This document is subject to change without notice.
V
V
V
DS
GS
GS
12.8
2.0
40
= 20 V
= 3 V
= 4 V
16.0
2.5
50
1100
880
660
440
220
1.8
1.6
1.4
1.2
1.0
0.8
0.6
8
6
4
2
0
0
- 50
0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
T
I
D
C
= 10 A
= 125 °C
5
1
V
T
V
C
DS
C
GS
C
Transfer Characteristics
0
T
oss
= 25 °C
iss
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
10
Capacitance
25
2
15
50
Vishay Siliconix
T
C
www.vishay.com/doc?91000
V
3
= - 55 °C
GS
75
20
Si4134DY
= 10 V
V
GS
100
www.vishay.com
= 4.5 V
4
25
125
150
30
5
3