SI4134DY-T1-GE3 Vishay, SI4134DY-T1-GE3 Datasheet - Page 2
![N-CHANNEL 30-V (D-S) MOSFET](/photos/15/83/158327/soic-8_sml.jpg)
SI4134DY-T1-GE3
Manufacturer Part Number
SI4134DY-T1-GE3
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet
1.SI4134DY-T1-GE3.pdf
(7 pages)
Specifications of SI4134DY-T1-GE3
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
24 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.9 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Drain Source Voltage Vds
30V
On Resistance Rds(on)
11.5mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4134DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4134DY
Vishay Siliconix
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
GS(th)
DS
Temperature Coefficient
Temperature Coefficient
b
a
a
a
J
= 25 °C, unless otherwise noted)
a
V
Symbol
R
V
V
This document is subject to change without notice.
GS(th)
I
t
t
t
t
I
C
V
I
DS(on)
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
I
GSS
DSS
Q
g
Q
R
SM
DS
I
t
t
t
oss
t
t
DS
rss
t
t
SD
iss
S
rr
fs
gs
gd
a
b
r
f
r
f
g
rr
g
/T
/T
J
J
I
F
V
V
V
I
V
I
= 10 A, dI/dt = 100 A/µs, T
D
D
DS
DS
DS
DS
10 A, V
10 A, V
= 30 V, V
= 15 V, V
V
V
= 15 V, V
= 15 V, V
V
V
V
V
V
DS
DS
V
V
V
GS
DD
DD
DS
DS
GS
DS
GS
Test Conditions
= V
= 0 V, V
= 0 V, I
= 30 V, V
= 15 V, R
= 15 V, R
5 V, V
= 15 V, I
10 V, I
4.5 V, I
T
I
f = 1 MHz
D
GEN
GEN
C
GS
I
S
GS
GS
= 250 µA
GS
GS
= 25 °C
= 3 A
, I
= 4.5 V, R
= 0 V, T
= 4.5 V, I
D
= 10 V, I
= 10 V, R
GS
= 0 V, f = 1 MHz
D
GS
= 250 µA
D
D
GS
L
L
= 250 µA
D
= ± 20 V
= 10 A
= 10 A
= 10 V
= 1.5
= 1.5
= 7 A
= 0 V
J
D
D
= 55 °C
g
J
g
= 10 A
= 10 A
= 1
= 25 °C
= 1
Min.
1.2
0.2
30
20
0.0115
0.0145
S11-0650-Rev. C, 11-Apr-11
Typ.
- 5.0
15.4
0.78
846
187
7.3
2.3
2.2
0.8
9.5
1.8
24
72
15
12
13
10
14
17
10
Document Number: 68999
33
9
9
8
7
www.vishay.com/doc?91000
0.0175
± 100
0.014
Max.
2.5
1.6
4.2
1.2
10
23
11
30
24
26
20
18
18
28
16
32
34
19
1
mV/°C
Unit
nA
µA
nC
nC
pF
ns
ns
ns
V
V
A
S
A
V