SI4134DY-T1-GE3 Vishay, SI4134DY-T1-GE3 Datasheet - Page 4
![N-CHANNEL 30-V (D-S) MOSFET](/photos/15/83/158327/soic-8_sml.jpg)
SI4134DY-T1-GE3
Manufacturer Part Number
SI4134DY-T1-GE3
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet
1.SI4134DY-T1-GE3.pdf
(7 pages)
Specifications of SI4134DY-T1-GE3
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
24 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.9 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Drain Source Voltage Vds
30V
On Resistance Rds(on)
11.5mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4134DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4134DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.1
10
0
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
0
J
= 150 °C
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
I
75
D
0.8
= 250 µA
0.01
100
This document is subject to change without notice.
0.1
T
10
100
J
1
0.1
= 25 °C
I
1.0
D
* V
Safe Operating Area, Junction-to-Ambient
Single Pulse
Limited by R
= 5 mA
T
125
A
GS
= 25 °C
> minimum V
V
1.2
150
DS
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
BVDSS Limited
at which R
0.06
0.05
0.04
0.03
0.02
0.01
0.00
10
DS(on)
80
64
48
32
16
0
0
0 .
0
is specified
0
On-Resistance vs. Gate-to-Source Voltage
1
I
Single Pulse Power, Junction-to-Ambient
D
1
1 ms
10 ms
100 ms
1 s
10 s
DC
= 10 A
2
V
0.01
100
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S11-0650-Rev. C, 11-Apr-11
Document Number: 68999
www.vishay.com/doc?91000
6
7
1
T
T
J
J
8
= 25 °C
= 125 °C
9
10
1
0