SI1967DH-T1-GE3 Vishay, SI1967DH-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI1967DH-T1-GE3
• Description: Dual N-Ch SC-70-6 (SOT-363) 20V 490mohm @ 4.5V
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1967DH-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 8V
• Input Capacitance (ciss) @ Vds: 110pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1967DH-T1-GE3TR

Si1967DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68784.
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
0.05
0.2
-4
0.1
0.05
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
0.02
0.02
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
A
t
1
1
S10-0721-Rev. B, 29-Mar-10
= P
t
2
Document Number: 68784
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 220 °C/W
600
10