SI1967DH-T1-GE3 Vishay, SI1967DH-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI1967DH-T1-GE3
• Description: Dual N-Ch SC-70-6 (SOT-363) 20V 490mohm @ 4.5V
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1967DH-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 8V
• Input Capacitance (ciss) @ Vds: 110pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1967DH-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68784
S10-0721-Rev. B, 29-Mar-10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
8
6
4
2
0
0.0
0.0
0.0
GS
On-Resistance vs. Drain Current and Gate Voltage
= 5 V thru 2.5 V
V
I
D
GS
= 1 A
0.5
0.5
0.5
= 1.8 V
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
1.0
1.0
I
1.0
- Total Gate Charge (nC)
V
D
DS
- Drain Current (A)
Gate Charge
V
= 10 V
V
GS
GS
1.5
1.5
= 2.5 V
1.5
= 4.5 V
V
DS
2.0
2.0
2.0
= 16 V
V
V
V
GS
GS
GS
2.5
2.5
2.5
= 1.5 V
= 1 V
= 2 V
3.0
3.0
3.0
200
160
120
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1.0
0.8
0.6
0.4
0.2
0.0
80
40
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
0.4
V
V
DS
T
GS
3
0
Transfer Characteristics
J
T
- Drain-to-Source Voltage (V)
T
C
V
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
C
oss
GS
= 125 °C
= 25 °C
25
Capacitance
= 4.5 V, 2.5 V; I
0.8
C
iss
50
6
Vishay Siliconix
V
GS
1.2
75
= 1.8 V; I
Si1967DH
D
T
C
= 0.91 A
= - 55 °C
100
www.vishay.com
9
1.6
D
= 0.12 A
125
150
2.0
12
3