SI1967DH-T1-GE3 Vishay, SI1967DH-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI1967DH-T1-GE3
• Description: Dual N-Ch SC-70-6 (SOT-363) 20V 490mohm @ 4.5V
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1967DH-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 8V
• Input Capacitance (ciss) @ Vds: 110pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1967DH-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68784
S10-0721-Rev. B, 29-Mar-10
1.6
1.2
0.8
0.4
0.0
0
Package Limited
25
D
T
is based on T
C
50
Current Derating*
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
50
Power, Junction-to-Foot
T
C
- Case Temperature (°C)
75
Vishay Siliconix
100
Si1967DH
www.vishay.com
125
150
5