si1967dh Vishay, si1967dh Datasheet

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si1967dh

Manufacturer Part Number
si1967dh
Description
Dual P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
si1967dh-T1-E3
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Triductor
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Part Number:
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Part Number:
si1967dh-T1-GE3
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si1967dh-T1-GE3
Manufacturer:
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Part Number:
si1967dh-T1-GE3
Quantity:
70 000
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 220 °C/W.
Document Number: 68784
S-81726-Rev. A, 04-Aug-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
G
D
DS
S
Ordering Information: Si1967DH-T1-E3 (Lead (Pb)-free)
- 20
1
1
2
(V)
1
2
3
SC-70 (6-LEADS)
SOT-363
Top View
0.490 at V
0.640 at V
0.790 at V
R
DS(on)
GS
GS
GS
6
5
4
J
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
= 150 °C)
b, d
Dual P-Channel 20-V (D-S) MOSFET
D
G
S
2
1
2
I
- 1.3
D
- 1.2
- 1.0
(A)
Steady State
a
T
T
T
T
T
T
T
T
T
T
t ≤ 5 s
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Marking Code
Q
DF
1.6 nC
g
(Typ.)
New Product
XX
Part # Code
Symbol
R
R
Lot Traceability
and Date Code
thJA
thJF
Symbol
T
J
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
FEATURES
APPLICATIONS
stg
• TrenchFET
• PWM Optimized
• Load Switch for Portable Devices
Typical
130
80
G
®
1
Power MOSFET
- 55 to 150
- 0.83
- 1.0
- 0.6
0.74
0.47
Limit
- 1.3
- 1.1
1.25
- 20
± 8
0.8
- 3
- 1
b, c
b, c
b, c
b, c
b, c
S
D
a
1
1
Maximum
170
100
Vishay Siliconix
G
2
Si1967DH
www.vishay.com
°C/W
Unit
Unit
S
D
RoHS
°C
COMPLIANT
W
V
A
2
2
1

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si1967dh Summary of contents

Page 1

... Top View Ordering Information: Si1967DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1967DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... V GS 0 0.0 2.0 2.5 3.0 200 160 120 80 40 2.0 2.5 3.0 1.4 1.3 1.2 1 1.0 DS 0.9 0.8 0.7 2.0 2.5 3.0 Si1967DH Vishay Siliconix ° 125 ° °C C 0.0 0.4 0.8 1.2 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance V = 4 0.91 A ...

Page 4

... Si1967DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.80 0.75 0.70 0. 250 µA D 0.60 0.55 0.50 0.45 0. Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product °C J 1.0 1.2 1.4 75 100 125 150 10 Limited by R DS(on ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68784 S-81726-Rev. A, 04-Aug-08 New Product 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si1967DH Vishay Siliconix 100 125 T - Case Temperature (°C) C Power, Junction-to-Foot www.vishay.com 150 5 ...

Page 6

... Si1967DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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