IRF9510STRR Vishay, IRF9510STRR Datasheet - Page 6

• Manufacturer Part Number: IRF9510STRR
• Description: -100V Single P-Channel HEXFET Power MOSFET In A D2-Pak Package
• Manufacturer: Vishay

Specifications of IRF9510STRR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF9510S, SiHF9510S
Vishay Siliconix
www.vishay.com
6
- 10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91073_12c
400
700
600
500
300
200
100
0
25
V
DD
Starting T
= - 25 V
50
J
75
, Junction Temperature (°C)
100
125
Top
Bottom
150
12 V
Fig. 13b - Gate Charge Test Circuit
- 1.6 A
- 2.8 A
- 4.0 A
V
GS
I
Same type as D.U.T.
D
Current regulator
175
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
I
G
S10-1728-Rev. B, 02-Aug-10
Document Number: 91073
D.U.T.
I
D
+
-
V
DS