IRF9510STRR Vishay, IRF9510STRR Datasheet - Page 4

• Manufacturer Part Number: IRF9510STRR
• Description: -100V Single P-Channel HEXFET Power MOSFET In A D2-Pak Package
• Manufacturer: Vishay

Specifications of IRF9510STRR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF9510S, SiHF9510S
Vishay Siliconix
www.vishay.com
4
91071_06
91073_05
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
350
280
210
140
70
20
16
12
0
8
4
0
10
0
I
0
D
= 8.0 A
- V
15
DS ,
Q
G
V
, Total Gate Charge (nC)
Drain-to-Source Voltage (V)
DS
= 100 V
V
30
DS
V
C
C
C
GS
iss
rss
oss
= 250 V
V
= 0 V, f = 1 MHz
= C
= C
= C
DS
10
gs
gd
45
ds
= 400 V
1
+ C
+ C
gd
gd
For test circuit
see figure 13
, C
C
C
C
iss
oss
rss
60
ds
Shorted
75
91071_08
91073_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
0.1
10
-1
1
0
2
5
2
5
2
5
2
1
0.1
1.0
Fig. 8 - Maximum Safe Operating Area
2
- V
5
V
175
DS
SD
1
Operation in this area limited
, Drain-to-Source Voltage (V)
2.0
°
, Source-to-Drain Voltage (V)
2
C
5
T
T
Single Pulse
10
C
J
by R
= 150 °C
= 25 °C
2
3.0
DS(on)
5
25
S10-1728-Rev. B, 02-Aug-10
10
°
Document Number: 91073
2
C
2
4.0
5
10
100
1
10
10
ms
V
µs
ms
3
GS
µs
2
= 0 V
5
10
5.0
4