IRF9510STRR Vishay, IRF9510STRR Datasheet - Page 5

• Manufacturer Part Number: IRF9510STRR
• Description: -100V Single P-Channel HEXFET Power MOSFET In A D2-Pak Package
• Manufacturer: Vishay

Specifications of IRF9510STRR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 91073
S10-1728-Rev. B, 02-Aug-10
91073_09
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
4.0
3.0
2.0
1.0
0.0
to obtain
91073_11
AS
25
R
- 10 V
10
g
0.1
10
-2
1
50
10
V
T
DS
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
C
, Case Temperature (°C)
t
p
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
100
D.U.T.
10
0.01 Ω
L
-4
125
Single Pulse
(Thermal Response)
150
10
+
175
-
t
-3
1
V
, Rectangular Pulse Duration (s)
DD
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
10 %
90 %
I
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
AS
DS
V
V
0.1
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
V
IRF9510S, SiHF9510S
t
GS
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
t
p
1
j
= P
P
D.U.T.
DM
DM
R
Vishay Siliconix
x Z
D
t
t
d(off)
1
1
thJC
/t
V
2
DS
t
+ T
2
t
f
C
10
+
-
www.vishay.com
V
V
DD
DD
5