IRF9510STRR Vishay, IRF9510STRR Datasheet - Page 2

• Manufacturer Part Number: IRF9510STRR
• Description: -100V Single P-Channel HEXFET Power MOSFET In A D2-Pak Package
• Manufacturer: Vishay

Specifications of IRF9510STRR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF9510S, SiHF9510S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
I
I
C
R
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
L
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
T
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
GS
GS
V
= 25 °C, I
T
R
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= - 10 V
= - 10 V
g
= 25 °C, I
= - 80 V, V
= 24 , R
V
V
V
V
V
DS
DD
f = 1.0 MHz, see fig. 5
DS
DS
TYP.
GS
TEST CONDITIONS
-
-
-
= - 50 V, I
= - 50 V, I
F
= V
= - 100 V, V
= 0 V, I
= - 4.0 A, dI/dt = 100 A/μs
V
V
V
GS
DS
S
GS
I
D
D
GS
= - 4.0 A, V
GS
= 11 , see fig. 10
, I
= - 25 V,
= - 4.0 A, V
= ± 20 V
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
= - 250 μA
D
= - 250 μA
D
I
D
= - 2.4 A
= - 4.0 A,
GS
= - 2.4 A
D
= - 1 mA
= 0 V
J
GS
= 150 °C
DS
G
G
= 0 V
b
= - 80 V,
b
MAX.
D
S
b
b
b
D
S
3.5
62
40
b
- 100
MIN.
- 2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-1728-Rev. B, 02-Aug-10
Document Number: 91073
- 0.091
TYP.
0.15
200
4.5
7.5
94
18
10
27
15
17
82
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
- 4.0
- 5.5
0.30
- 16
160
1.2
8.7
2.2
4.1
S
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V