SQD45P03-12-GE3 Vishay, SQD45P03-12-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQD45P03-12-GE3
• Description: MOSFET,P CH,W DIODE,30V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD45P03-12-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 0.008ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Power: RoHS Compliant
• Power Dissipation Pd: 71W
• Rohs Compliant: Yes

THERMAL RATINGS (T
Document Number: 65549
S10-1862-Rev. B, 06-Sep-10
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
10
Single Pulse
-3
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
100
0.1
10
10
1
0.01
-2
Single Pulse
Limited by R
T
* V
C
= 25 °C
GS
> minimum V
V
Square Wave Pulse Duration (s)
I
0.1
DM
DS
DS(on)
Safe Operating Area
10
Limited
- Drain-to-Source Voltage (V)
-1
*
GS
I
D
at which R
Limited
1
BVDSS Limited
DS(on)
1
10
is specified
100 µs
100 ms
1 s, 10 s, DC
1 ms
10 ms
100
10
SQD45P03-12
100
Vishay Siliconix
www.vishay.com
1000
5