SQD45P03-12-GE3 Vishay, SQD45P03-12-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQD45P03-12-GE3
• Description: MOSFET,P CH,W DIODE,30V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD45P03-12-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 0.008ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Power: RoHS Compliant
• Power Dissipation Pd: 71W
• Rohs Compliant: Yes

TYPICAL CHARACTERISTICS (T
Document Number: 65549
S10-1862-Rev. B, 06-Sep-10
100
2.0
1.7
1.4
1.1
0.8
0.5
80
60
40
20
60
48
36
24
12
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
I
- 25
D
T
C
= 15 A
V
= 25 °C
GS
3
8
V
0
DS
= 10 V thru 7 V
T
Output Characteristics
T
J
- Drain-to-Source Voltage (V)
C
- Junction Temperature (°C)
V
Transconductance
= - 55 °C
I
25
GS
D
- Drain Current (A)
16
= 6 V
6
50
V
75
GS
24
9
= 10 V
100
T
A
V
C
GS
= 25 °C, unless otherwise noted)
= 125 °C
125
12
32
= 5 V
150
175
15
40
0.001
0.05
0.04
0.03
0.02
0.01
0.00
100
0.01
100
80
60
40
20
0.1
10
0
1
0.0
0
0
V
GS
T
C
Source Drain Diode Forward Voltage
= 4.5 V
= 125 °C
0.2
On-Resistance vs. Drain Current
T
20
C
2
V
V
T
= 25 °C
SD
GS
J
Transfer Characteristics
= 150 °C
- Source-to-Drain Voltage (V)
- Gate-to-Source Voltage (V)
0.4
V
I
D
GS
- Drain Current (A)
40
4
= 10 V
T
SQD45P03-12
C
0.6
Vishay Siliconix
= - 55 °C
60
6
T
0.8
J
= 25 °C
www.vishay.com
80
8
1.0
1.2
100
10
3