SQD45P03-12-GE3 Vishay, SQD45P03-12-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQD45P03-12-GE3
• Description: MOSFET,P CH,W DIODE,30V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD45P03-12-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 0.008ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Power: RoHS Compliant
• Power Dissipation Pd: 71W
• Rohs Compliant: Yes

SQD45P03-12
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.10
0.08
0.06
0.04
0.02
0.00
5000
4000
3000
2000
1000
0
0
0
On-Resistance vs. Gate-to-Source Voltage
C
C
rss
oss
5
2
C
V
V
iss
GS
DS
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
10
Capacitance
4
15
6
T
J
20
= 25 °C
- 30
- 32
- 34
- 36
- 38
- 40
A
- 50
Drain Source Breakdown vs. Junction Temperature
= 25 °C, unless otherwise noted)
T
J
8
= 150 °C
25
- 25
0
10
30
T
J
- Junction Temperature (°C)
25
50
75
I
D
100
= 10 mA
- 0.1
- 0.4
1.1
0.8
0.5
0.2
- 50
125
10
8
6
4
2
0
0
150
- 25
I
D
= 45 A
10
175
0
Q
T
25
Threshold Voltage
g
J
20
- Total Gate Charge (nC)
- Temperature (°C)
Gate Charge
50
V
DS
30
= 15 V
S10-1862-Rev. B, 06-Sep-10
75
Document Number: 65549
I
D
100
= 250 µA
40
125
I
D
= 5 mA
50
150
175
60