SQD45P03-12 Vishay, SQD45P03-12 Datasheet
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SQD45P03-12
Available stocks
Related parts for SQD45P03-12
SQD45P03-12 Summary of contents
Page 1
... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC SQD45P03-12 Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT - 30 V ± 175 °C LIMIT UNIT 50 °C/W 1 ...
Page 2
... SQD45P03-12 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
Page 3
... Junction Temperature (°C) J On-Resistance vs. Junction Temperature Document Number: 65549 S09-2259-Rev. A, 02-Nov- °C, unless otherwise noted 125 ° 100 125 150 175 SQD45P03-12 Vishay Siliconix 100 ° 125 ° ° ...
Page 4
... SQD45P03-12 Vishay Siliconix TYPICAL CHARACTERISTICS T 0.10 0.08 0.06 0.04 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted A 1.1 0.8 0.5 0 150 ° ° 0 100 T - Junction Temperature (°C) J Drain Source Breakdown vs. Junction Temperature I = 250 µ ...
Page 5
... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65549. Document Number: 65549 S09-2259-Rev. A, 02-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQD45P03-12 Vishay Siliconix - www.vishay.com 5 ...
Page 6
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...