AT-41535G Avago Technologies US Inc., AT-41535G Datasheet - Page 2

• Manufacturer Part Number: AT-41535G
• Description: RF TRANSISTOR, NPN, 12V, 8GHZ 35 MICRO-X
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41535G

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 500mW
• Dc Collector Current: 60mA
• Dc Current Gain Hfe: 180
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 4GHz
• Gain: 10dB ~ 18dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 8V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (35 micro-X)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 1. Absolute Maximum Ratings
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T—CASE = 25°C
3. Derate at 8 mW/°C for Tc>87.5°C.
4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.
5. Thermal Resistance is measured using IR Microscopy method.
Table 2. Electrical Specifications at Tc = +25°C, V
Notes:
1. For this test, the emitter is grounded.
2
Symbol
V
V
V
I
P
Tj
Tstg
qjc
Symbol
|S
P1dB
G1dB
NFo
G
f
h
I
I
C
C
CBO
EBO
T
T
EBO
CBO
CEO
FE
cBO
A
21E
|
2
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Parameter and Test Condition
Insertion Power Gain; V
Power Output @1dB Gain Compression:
V
1 dB Compressed Gain:
V
Optimum Noise Figure:
V
Gain @ NFo ;
V
Gain Bandwidth Product: Ic = 25 mA
Forward Current Transfer Ratio:
V
Collector Cutoff Current: V
Emitter Cutoff Current: V
Collector Base Capacitance
V
CE
CE
CE
CE
CE
CB
=8V, Ic=25 mA
=8V, Ic=25 mA
=8V, Ic = 10 mA
=8V, Ic=10mA
=8V, Ic = 10 mA
=8V,F=1MHz
[2]
[5]
[1]
at Tc = +25°C
CE
EB
=8V, Ic=25mA
CB
= 1 V
[1]
CE
= 8 V
:
=8V
Unit
V
V
V
mA
mW
°C
°C
°C/W
Max Rating
1.5
20
12
60
500
150
-60 to 150
125
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Units
dB
dBm
dB
dB
dB
GHz
-
uA
uA
pF
Min.
13.0
30
Typ.
11.0
5.5
19.0
18.5
14.0
9.0
1.30
1.70
3.00
18.0
14.0
10.0
8.0
180
0.20
Max.
2.0
270
0.2
1.0