AT-41535G Avago Technologies US Inc., AT-41535G Datasheet

AT-41535G

Manufacturer Part Number

AT-41535G

Description

RF TRANSISTOR, NPN, 12V, 8GHZ 35 MICRO-X

Manufacturer

Avago Technologies US Inc.

Datasheet

1.AT-41535G.pdf (5 pages)

Specifications of AT-41535G

Transistor Polarity

NPN

Collector Emitter Voltage V(br)ceo

12V

Transition Frequency Typ Ft

8GHz

Power Dissipation Pd

500mW

Dc Collector Current

60mA

Dc Current Gain Hfe

180

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

12V

Frequency - Transition

8GHz

Noise Figure (db Typ @ F)

1.3dB ~ 3dB @ 1GHz ~ 4GHz

Gain

10dB ~ 18dB

Power - Max

500mW

Dc Current Gain (hfe) (min) @ Ic, Vce

30 @ 10mA, 8V

Current - Collector (ic) (max)

60mA

Mounting Type

Surface Mount

Package / Case

4-SMD (35 micro-X)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AT-41535G

Manufacturer:

AVAGO

Quantity:

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Download datasheet (134Kb)

AT-41535

Up to 6 GHz Low Noise Silicon Bipolar Transistor

Data Sheet

Description/Applications

The AT-41535 of Avago Techologies is a general pur-

pose NPN bipolar transistor that offers excellent high

frequency performance. The AT-41535 is house in a cost

effective surface mount 100 mil micro-X package. The 4

micron emitter-to-emitter pitch enables this transistor

to be used in many different functions. The 15 emitter

fingers interdigitated geometry yields an intermediate

sized transistor with impedances that are easy to match

for low noise and moderate power applications. This

device is designed for use in low noise, wideband ampli-

fier, mixer and oscillator applications in the VHF, UHF,

and microwave frequencies. An optimum noise match

near 50 ??at 1GHz, makes this device easy to use as a low

noise amplifier.

The AT-41535 bipolar transistor is fabricated using Avago

Technologies’ 10 GHz fT Self-Aligned-Transistor (SAT) pro-

cess. The die is nitride passivated for surface protection.

Excellent device uniformity, performance and reliability

are produced by the use of ion implantation, self-align-

ment techniques, and gold metallization in the fabrica-

tion of this device.

Features

• Low Noise Figure :

• High Associated Gain

• High Gain-Bandwidth Product

• Cost Effective Ceramic Micro-strip Package

35 micro-X Package

- 1.7 dB typical at 2.0 GHz

- 3.0 dB typical at 4.0 GHz

- 14.0 dB typical at 2.0GHz

- 10.0 dB typical at 4.0 GHz

- 8.0 GHz typical fT

Related parts for AT-41535G

AT-41535G Summary of contents

Page 1

... VHF, UHF, and microwave frequencies. An optimum noise match near 50 ??at 1GHz, makes this device easy to use as a low noise amplifier. The AT-41535 bipolar transistor is fabricated using Avago Technologies’ ...

Page 2

... Thermal Resistance Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. T—CASE = 25°C 3. Derate at 8 mW/°C for Tc>87.5°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. Thermal Resistance is measured using IR Microscopy method. ...

Page 3

... Figure 2. Output Power and 1dB Compression Gain vs. Collector Current and Fre- quency. Vce = 8V 10V 10V Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Fre- quency. Vce = 8V MAG Figure 6. Insertion Power Gain vs. Collector Current and Frequency. Vce = 8V. P1dB G1dB (mA) 2.0GHz Ga 4.0GHz 4.0GHz NFo 2.0GHz 10 20 ...

Page 4

... Typical Scattering Parameters +25°C Common Emitter, V =8V 25mA, Zo=50 Ohm CE Freq. S11 S21 GHz Mag. Ang. dB 0.1 0.586 -53.5 32.22 0.5 0.382 -140.8 23. ...

Page 5

... Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes AV01-0144EN AV02-1216EN - April 29, 2008 Part Number Ordering Information Part number AT-41535G Ang RN/50 -4.1 0.22 9 ...

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