PSMN6R5-80PS NXP Semiconductors, PSMN6R5-80PS Datasheet - Page 9

• Manufacturer Part Number: PSMN6R5-80PS
• Description: MOSFET,N CH,80V,100A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN6R5-80PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 5.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN6R5-80PS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
12
10
10
GS
8
6
4
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
20
20
40
40
16 V
V
GS
60
(V) = 5
10
V
60
DS
64 V
80
Q
All information provided in this document is subject to legal disclaimers.
= 40 V
003aad441
003aad444
G
I
D
(nC)
(A)
5.5
20
6
8
Rev. 02 — 1 November 2010
100
80
N-channel 80 V 6.9 mΩ standard level MOSFET in TO220
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
PSMN6R5-80PS
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa508
003aad445
(V)
C
C
C
iss
oss
rss
10
2
9 of 15