PSMN6R5-80PS NXP Semiconductors, PSMN6R5-80PS Datasheet - Page 7

• Manufacturer Part Number: PSMN6R5-80PS
• Description: MOSFET,N CH,80V,100A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN6R5-80PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 5.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
[1]
PSMN6R5-80PS
Product data sheet
Symbol
t
Q
rr
Fig 5.
Fig 7.
r
Measured 3 mm from package.
(pF)
(A)
7000
6000
5000
4000
3000
2000
C
I
100
D
80
60
40
20
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Input and reverse transfer capacitances as a
0
0
Characteristics
Parameter
reverse recovery time
recovered charge
10
20
5
0.5
8
10
5.5
6
…continued
1
15
V
C
C
1.5
GS
rss
iss
20
All information provided in this document is subject to legal disclaimers.
(V) = 4.5
V
003aad446
003aad440
V
DS
GS
(V)
(V)
5
Rev. 02 — 1 November 2010
Conditions
I
V
S
25
GS
2
= 25 A; dI
= 0 V; V
N-channel 80 V 6.9 mΩ standard level MOSFET in TO220
S
DS
/dt = 100 A/µs;
Fig 6.
Fig 8.
= 40 V
(A)
(S)
g
I
100
150
120
D
fs
80
60
40
20
90
60
30
0
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
20
2
PSMN6R5-80PS
T
40
j
= 175 °C
Min
-
-
60
4
Typ
48
82
T
© NXP B.V. 2010. All rights reserved.
80
V
j
= 25 °C
003aad447
003aad442
GS
I
D
(V)
Max
-
-
(A)
100
6
Unit
ns
nC
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